Invention Grant
- Patent Title: Self-aligned contacts in carbon devices
- Patent Title (中): 碳装置中的自对准触点
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Application No.: US13562827Application Date: 2012-07-31
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Publication No.: US08455862B2Publication Date: 2013-06-04
- Inventor: Josephine B. Chang , Dechao Guo , Shu-Jen Han , Chung-Hsun Lin
- Applicant: Josephine B. Chang , Dechao Guo , Shu-Jen Han , Chung-Hsun Lin
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/775
- IPC: H01L29/775
Abstract:
A semiconductor device includes a carbon layer disposed on a substrate, a gate stack disposed on a portion of the carbon layer, a first cavity defined by the carbon layer and the substrate, a second cavity defined by the carbon layer and the substrate, a source region including a first conductive contact disposed in the first cavity, a drain region including a second conductive contact disposed in the second cavity.
Public/Granted literature
- US20120292597A1 Self-Aligned Contacts in Carbon Devices Public/Granted day:2012-11-22
Information query
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