Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13035069Application Date: 2011-02-25
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Publication No.: US08456010B2Publication Date: 2013-06-04
- Inventor: Shinji Saito , Maki Sugai , Eiji Muramoto , Shinya Nunoue
- Applicant: Shinji Saito , Maki Sugai , Eiji Muramoto , Shinya Nunoue
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-198632 20100906
- Main IPC: H01L23/482
- IPC: H01L23/482
Abstract:
A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a polycrystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer.
Public/Granted literature
- US20120056153A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-03-08
Information query
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