公开(公告)号：US08648377B2

公开(公告)日：2014-02-11

申请号：US13705342

申请日：2012-12-05

申请人： Eiji Muramoto ,  Shinya Nunoue

发明人： Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

公开(公告)号：US20120276668A1

公开(公告)日：2012-11-01

申请号：US13234778

申请日：2011-09-16

申请人： Eiji Muramoto

发明人： Eiji Muramoto

IPC分类号： H01L33/08

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/0095

摘要： In one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include forming a plurality of light emitting regions on a major surface of a support substrate. The method can include forming V-shaped grooves by anisotropic etching between the plurality of light emitting regions in the major surface of the support substrate. In addition, the method can include dividing the support substrate at positions of the grooves to separate the light emitting regions.

摘要翻译： 在一个实施例中，公开了一种用于制造半导体发光器件的方法。 该方法可以包括在支撑衬底的主表面上形成多个发光区域。 该方法可以包括通过在支撑衬底的主表面中的多个发光区域之间的各向异性蚀刻形成V形槽。 此外，该方法可以包括将支撑基板划分在凹槽的位置以分离发光区域。

公开(公告)号：US08093608B2

公开(公告)日：2012-01-10

申请号：US12408806

申请日：2009-03-23

申请人： Eiji Muramoto ,  Shinya Nunoue

发明人： Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

公开(公告)号：US20110284908A1

公开(公告)日：2011-11-24

申请号：US13195926

申请日：2011-08-02

申请人： Eiji MURAMOTO ,  Shinya NUNOUE ,  Toshiyuki OKA

发明人： Eiji MURAMOTO ,  Shinya NUNOUE ,  Toshiyuki OKA

IPC分类号： H01L33/60 ,  H01L33/36

CPC分类号： H01L33/38 ,  H01L33/12 ,  H01L33/32 ,  H01L33/40 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, a second electrode, a third electrode, and a fourth electrode. The stacked structural body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode forms an ohmic contact with the second semiconductor layer. The second electrode is translucent to light emitted from the light emitting layer. The third electrode penetrates through the second electrode and is electrically connected to the second electrode to form Shottky contact with the second semiconductor layer. The third electrode is disposed between the fourth electrode and the second semiconductor layer. A shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer is same as a shape of the third electrode as viewed along the stacking direction.

摘要翻译： 根据一个实施例，半导体发光器件包括层叠结构体，第一电极，第二电极，第三电极和第四电极。 层叠结构体包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极电连接到第一半导体层。 第二电极与第二半导体层形成欧姆接触。 第二电极对于从发光层发射的光是半透明的。 第三电极穿过第二电极并与第二电极电连接以与第二半导体层形成肖特基接触。 第三电极设置在第四电极和第二半导体层之间。 沿第一半导体层，发光层和第二半导体层的堆叠方向观察的第四电极的形状与沿着层叠方向观察的第三电极的形状相同。

公开(公告)号：US20090321714A1

公开(公告)日：2009-12-31

申请号：US12408806

申请日：2009-03-23

申请人： Eiji MURAMOTO ,  Shinya Nunoue

发明人： Eiji MURAMOTO ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L29/66 ,  H01L21/28

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

公开(公告)号：US20050180377A1

公开(公告)日：2005-08-18

申请号：US10512814

申请日：2002-09-06

申请人： Eiji Muramoto ,  Kougi Satou ,  Takashi Kawabata ,  Norihiko Toyota

发明人： Eiji Muramoto ,  Kougi Satou ,  Takashi Kawabata ,  Norihiko Toyota

IPC分类号： H04W72/04 ,  H04W72/12 ,  H04W74/04 ,  H04J3/00

CPC分类号： H04W72/0446

摘要： When the total number of transmission request time slots from a base station and a subscriber station exceeds the the radio line, the ratio of the number of communication time slots against the total number of transmission request times slots from the base station and the subscriber station is calculated and the number of time slots allocated for each subscriber station is determined by a product of a total number and ratio of the transmission request time slots from the subscriber station.

摘要翻译： 当来自基站和用户站的传输请求时隙的总数超过无线电线路时，通信时隙数量与基站和用户台的传输请求时隙总数的比率是 分配给每个用户台的时隙数量由来自用户台的传输请求时隙的总数和比率的乘积确定。

公开(公告)号：US08680566B2

公开(公告)日：2014-03-25

申请号：US13718618

申请日：2012-12-18

申请人： Eiji Muramoto ,  Shinya Nunoue

发明人： Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer.

摘要翻译： 半导体发光器件包括n型半导体层，p型半导体层和形成在n型半导体层和p型半导体层之间的有源层，并且发射光。 该器件还包括与p型半导体层接触的p电极，并且包括氧含量低于40原子％的第一导电氧化物层和与第一导电氧化物层接触并具有较高的第二导电氧化物层的第二导电氧化物层 氧含量比第一导电氧化物层的氧含量高。 该器件还包括与n型半导体层电连接的n电极。

公开(公告)号：US08384109B2

公开(公告)日：2013-02-26

申请号：US13238818

申请日：2011-09-21

申请人： Eiji Muramoto ,  Shinya Nunoue

发明人： Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/04 ,  H01L33/0062 ,  H01L33/38 ,  H01L33/405

摘要： A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side.

摘要翻译： 一种半导体发光装置，包括：基板，形成在基板上的n型半导体层，层叠在n型半导体层上的能够发光的有源层，层叠在有源层上的p型半导体层 设置在半导体衬底的下表面上或n型半导体层上并与有源层和p型半导体层间隔开的n电极和设置在p型半导体层上的p电极， 并且包括形成在点状金属层上的反射欧姆金属层，其中从有源层发射的光从基板侧向外部提取。

公开(公告)号：US20090185589A1

公开(公告)日：2009-07-23

申请号：US12408810

申请日：2009-03-23

申请人： Yasushi HATTORI ,  Shinji Saito ,  Shinya Nunoue ,  Eiji Muramoto ,  Koichi Tachibana ,  Saori Abe ,  Jongil Hwang ,  Maki Sugai

发明人： Yasushi HATTORI ,  Shinji Saito ,  Shinya Nunoue ,  Eiji Muramoto ,  Koichi Tachibana ,  Saori Abe ,  Jongil Hwang ,  Maki Sugai

IPC分类号： H01S3/10 ,  F21V9/16 ,  G02F1/35

CPC分类号： H01L33/507 ,  B82Y20/00 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/18 ,  H01S5/183 ,  H01S5/2027 ,  H01S5/327 ,  H01S5/34333 ,  H01S5/42 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting device which includes a semiconductor light-emitting element, and a plurality of plate-like wavelength conversion members which are disposed to face the semiconductor light-emitting element and are inclined with respect to the optical axis of excitation light emitted from the semiconductor light-emitting element, the plate-like wavelength conversion members containing respectively a fluorescent material which is capable of absorbing the excitation light and outputting light having a different wavelength from that of the excitation light, and the plate-like wavelength conversion members as a whole emitting visible light.

摘要翻译： 一种发光装置，其包括半导体发光元件和多个板状波长转换构件，所述多个板状波长转换构件设置成面对所述半导体发光元件并且相对于从所述半导体发光元件发射的激发光的光轴倾斜 半导体发光元件，板状波长转换构件分别包含能够吸收激发光并输出与​​激发光的波长不同的光的荧光材料，并且板状波长转换构件为 整个发射可见光。

公开(公告)号：US08610158B2

公开(公告)日：2013-12-17

申请号：US13165837

申请日：2011-06-22

申请人： Eiji Muramoto ,  Shinya Nunoue

发明人： Eiji Muramoto ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device according to an embodiment includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on a first region of the n-type semiconductor layer, and emitting light; a p-type semiconductor layer formed on the active layer; a p-electrode formed on the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic %; and an n-electrode formed on a second region of the n-type semiconductor layer.

摘要翻译： 根据实施例的半导体发光器件包括：衬底; 在该基板上形成的n型半导体层; 形成在所述n型半导体层的第一区域上并且发射光的有源层; 形成在有源层上的p型半导体层; 形成在p型半导体层上的p电极，并且包括氧含量低于40原子％的第一导电氧化物层; 以及形成在n型半导体层的第二区域上的n电极。