发明授权
US08456901B2 Spin-torque transfer magneto-resistive memory architecture 失效
自旋扭矩传递磁阻存储器架构

Spin-torque transfer magneto-resistive memory architecture
摘要:
A system includes a processor and a memory array connected to the processor comprising a first memory cell comprising a first magnetic tunnel junction device having a first terminal connected to a first bit line and a second terminal, and a first field effect transistor having a source terminal connected to a second bit line, a gate terminal connected to a word line, and a drain terminal connected to the second terminal of the first magnetic tunnel junction device, and a second memory cell comprising a second magnetic tunnel junction device having a first terminal connected to a third bit line and a second terminal, and a second field effect transistor having a source terminal connected to the second bit line, a gate terminal connected to the word line, and a drain terminal connected to the second terminal of the second magnetic tunnel junction device.
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