发明授权
- 专利标题: Spin-torque transfer magneto-resistive memory architecture
- 专利标题(中): 自旋扭矩传递磁阻存储器架构
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申请号: US13559672申请日: 2012-07-27
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公开(公告)号: US08456901B2公开(公告)日: 2013-06-04
- 发明人: John K. DeBrosse , Yutaka Nakamura
- 申请人: John K. DeBrosse , Yutaka Nakamura
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A system includes a processor and a memory array connected to the processor comprising a first memory cell comprising a first magnetic tunnel junction device having a first terminal connected to a first bit line and a second terminal, and a first field effect transistor having a source terminal connected to a second bit line, a gate terminal connected to a word line, and a drain terminal connected to the second terminal of the first magnetic tunnel junction device, and a second memory cell comprising a second magnetic tunnel junction device having a first terminal connected to a third bit line and a second terminal, and a second field effect transistor having a source terminal connected to the second bit line, a gate terminal connected to the word line, and a drain terminal connected to the second terminal of the second magnetic tunnel junction device.
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