发明授权
US08461050B2 Taper-etching method and method of manufacturing near-field light generator
有权
锥形蚀刻方法及制造近场光发生器的方法
- 专利标题: Taper-etching method and method of manufacturing near-field light generator
- 专利标题(中): 锥形蚀刻方法及制造近场光发生器的方法
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申请号: US13157938申请日: 2011-06-10
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公开(公告)号: US08461050B2公开(公告)日: 2013-06-11
- 发明人: Hironori Araki , Yoshitaka Sasaki , Hiroyuki Ito , Kazuki Sato , Shigeki Tanemura , Yukinori Ikegawa
- 申请人: Hironori Araki , Yoshitaka Sasaki , Hiroyuki Ito , Kazuki Sato , Shigeki Tanemura , Yukinori Ikegawa
- 申请人地址: US CA Milpitas
- 专利权人: Headway Technologies, Inc.
- 当前专利权人: Headway Technologies, Inc.
- 当前专利权人地址: US CA Milpitas
- 代理机构: Oliff & Berridge, PLC
- 主分类号: H01L21/311
- IPC分类号: H01L21/311
摘要:
A method of taper-etching a layer to be etched that is made of SiO2 or SiON and has a top surface. The method includes the step of forming an etching mask with an opening on the top surface of the layer to be etched, and the step of taper-etching a portion of the layer to be etched, the portion being exposed from the opening, by reactive ion etching so that a groove having two wall faces that intersect at a predetermined angle is formed in the layer to be etched. The etching mask is formed of a material containing elemental Al. The step of taper-etching employs an etching gas that contains a main component gas, which contributes to the etching of the layer to be etched, and N2.