发明授权
US08461642B2 Semiconductor device having a nonvolatile memory cell with field effect transistors
有权
具有具有场效应晶体管的非易失性存储单元的半导体器件
- 专利标题： Semiconductor device having a nonvolatile memory cell with field effect transistors
- 专利标题（中）： 具有具有场效应晶体管的非易失性存储单元的半导体器件
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申请号： US12534140申请日： 2009-08-02
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公开(公告)号： US08461642B2公开(公告)日： 2013-06-11
- 发明人: Takuro Homma , Yasushi Ishii , Kota Funayama
- 申请人： Takuro Homma , Yasushi Ishii , Kota Funayama
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2008-230101 20080908
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/336
摘要：
The present invention can realize a highly-integrated semiconductor device having a MONOS type nonvolatile memory cell equipped with a split gate structure without deteriorating the reliability of the device. A memory gate electrode of a memory nMIS has a height greater by from 20 to 100 nm than that of a select gate electrode of a select nMIS so that the width of a sidewall formed over one (side surface on the side of a source region) of the side surfaces of the memory gate electrode is adjusted to a width necessary for achieving desired disturb characteristics. In addition, a gate electrode of a peripheral second nMIS has a height not greater than the height of a select gate electrode of a select nMIS to reduce the width of a sidewall formed over the side surface of the gate electrode of the peripheral second nMIS so that a shared contact hole is prevented from being filled with the sidewall.
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