- 专利标题： Semiconductor component with a drift region and a drift control region
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申请号： US11996906申请日： 2006-07-27
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公开(公告)号： US08461648B2公开(公告)日： 2013-06-11
- 发明人: Frank Pfirsch , Anton Mauder , Armin Willmeroth , Hans-Joachim Schulze , Stefan Sedlmaier , Markus Zundel , Franz Hirler , Arunjai Mittal
- 申请人： Frank Pfirsch , Anton Mauder , Armin Willmeroth , Hans-Joachim Schulze , Stefan Sedlmaier , Markus Zundel , Franz Hirler , Arunjai Mittal
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Dicke, Billig & Czaja, PLLC
- 优先权： DE102005035153 20050727; DE102005039331 20050819; DE102006009942 20060303
- 国际申请： PCT/EP2006/007450 WO 20060727
- 国际公布： WO2007/012490 WO 20070201
- 主分类号： H01L29/732
- IPC分类号： H01L29/732
摘要：
A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.
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