- 专利标题: Film deposition apparatus
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申请号: US12491313申请日: 2009-06-25
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公开(公告)号: US08465591B2公开(公告)日: 2013-06-18
- 发明人: Hitoshi Kato , Manabu Honma , Anthony Dip
- 申请人: Hitoshi Kato , Manabu Honma , Anthony Dip
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: IPUSA, PLLC
- 优先权: JP2008-215984 20080825; JP2009-056685 20090310; JP2009-139575 20090610
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.
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