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US08466514B2 Semiconductor power device integrated with improved gate source ESD clamp diodes 有权
半导体功率器件与改进的栅源ESD钳位二极管集成

Semiconductor power device integrated with improved gate source ESD clamp diodes
摘要：
A trench semiconductor power device integrated with four types of ESD clamp diodes for optimization of total perimeter of the ESD clamp diodes, wherein the ESD clamp diodes comprise multiple back to back Zener diodes with alternating doped regions of a first conductivity type next to a second conductivity type, wherein each of the doped regions has a closed ring structure.
摘要（中）：

一种与四种类型的ESD钳位二极管集成的沟槽半导体功率器件，用于优化ESD钳位二极管的总周边，其中ESD钳位二极管包括多个背靠背齐纳二极管，其具有紧邻第二导电性的第一导电类型的交替掺杂区域 型，其中每个掺杂区具有闭环结构。

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