发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US13246996申请日: 2011-09-28
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公开(公告)号: US08467241B2公开(公告)日: 2013-06-18
- 发明人: Jun Fujiki , Kiwamu Sakuma , Naoki Yasuda , Yukio Nakabayashi , Masumi Saitoh
- 申请人: Jun Fujiki , Kiwamu Sakuma , Naoki Yasuda , Yukio Nakabayashi , Masumi Saitoh
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Posz Law Group, PLC
- 优先权: JP2010-219988 20100929
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
In a semiconductor layer, information is written by applying a first potential to a first electrode, applying a second potential that is lower than the first potential to all of back gate electrodes, applying a third potential that is higher than the first potential to the first to (i−1)th front gate electrodes, and applying a fourth potential that is between the second and third potentials to the ith and subsequent front gate electrodes, where “i” is a positive integer and identifies a specific location to which information is to be written.
公开/授权文献
- US20120075928A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2012-03-29
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