发明授权
- 专利标题： Method for removing photoresist pattern
- 专利标题（中）： 去除光刻胶图案的方法
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申请号： US13024678申请日： 2011-02-10
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公开(公告)号： US08470519B2公开(公告)日： 2013-06-25
- 发明人: Dong-Jin Byun , Sam-Seok Jang , Bum-Joon Kim , Jung-Geun Jhin , Sang-Il Kim , Do-Han Lee
- 申请人： Dong-Jin Byun , Sam-Seok Jang , Bum-Joon Kim , Jung-Geun Jhin , Sang-Il Kim , Do-Han Lee
- 申请人地址： KR Seoul
- 专利权人： Korea University Research and Business Foundation
- 当前专利权人： Korea University Research and Business Foundation
- 当前专利权人地址： KR Seoul
- 代理机构： Edwards Wildman Palmer LLP
- 优先权： KR10-2010-0012492 20100210
- 主分类号： G03F7/36
- IPC分类号： G03F7/36
摘要：
Disclosed is a method of removing a photoresist pattern, which includes radiating light onto a substrate having a photoresist pattern formed thereon and implanted with a predetermined dopant so that the temperature of the substrate is increased to be equal to or higher than a temperature able to remove the photoresist pattern, and by which the photoresist pattern formed on the substrate can be almost completely removed using a simple process for radiating light onto the substrate so that the temperature of the substrate is increased to be equal to or higher than a temperature able to the photoresist pattern.
公开/授权文献
- US20110200951A1 METHOD FOR REMOVING PHOTORESIST PATTERN 公开/授权日：2011-08-18
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