发明授权
- 专利标题: Light emitting device and manufacturing method thereof
- 专利标题(中): 发光元件及其制造方法
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申请号: US13276562申请日: 2011-10-19
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公开(公告)号: US08471273B2公开(公告)日: 2013-06-25
- 发明人: Shunpei Yamazaki , Satoshi Seo
- 申请人: Shunpei Yamazaki , Satoshi Seo
- 申请人地址: JP Atsugi-shi, Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi, Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP2001-358444 20011122
- 主分类号: H01L29/18
- IPC分类号: H01L29/18
摘要:
A light emitting device which includes a first TFT, a second TFT, a first pixel electrode, a second pixel electrode, an organic compound layer, a first opposing electrode and a second opposing electrode. The organic compound layer is formed on the first pixel electrode and the second pixel electrode. The first opposing electrode and a second opposing electrode are formed on the organic compound layer. When the first pixel electrode and the second opposing electrode are anodes, the second pixel electrode and the first opposing electrode are cathodes. When the first pixel electrode and the second opposing electrode are cathodes, the second pixel electrode and the first opposing electrode are anodes.
公开/授权文献
- US20120056204A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日:2012-03-08
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