Invention Grant
US08472492B2 Vertical cavity surface emitting laser element, vertical cavity surface emitting laser array element, vertical cavity surface emitting laser device, light source device, and optical module
有权
垂直腔表面发射激光元件，垂直腔表面发射激光器阵列元件，垂直腔表面发射激光器件，光源器件和光学模块
- Patent Title: Vertical cavity surface emitting laser element, vertical cavity surface emitting laser array element, vertical cavity surface emitting laser device, light source device, and optical module
- Patent Title (中): 垂直腔表面发射激光元件，垂直腔表面发射激光器阵列元件，垂直腔表面发射激光器件，光源器件和光学模块
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Application No.: US12726668Application Date: 2010-03-18
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Publication No.: US08472492B2Publication Date: 2013-06-25
- Inventor: Yasumasa Kawakita , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
- Applicant: Yasumasa Kawakita , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
- Applicant Address: JP Tokyo
- Assignee: Furukawa Electric Co., Ltd.
- Current Assignee: Furukawa Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-079665 20090327; JP2009-278750 20091208
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
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