摘要:
Provided is a vertical light emitting device comprising an upper multilayer reflective film and a lower multilayer reflective film that are formed facing each other and oscillate light; an intermediate layer that is formed below the upper multilayer reflective film and includes a layer having a different composition than the upper multilayer reflective film; and an electrode portion that is formed to sandwich the intermediate layer in a cross-sectional plane parallel to an oscillation direction of the light and to have a top end that is higher than a top surface of the intermediate layer. After the electrode portion is formed to sandwich the intermediate layer, the upper multilayer reflective film is layered on the intermediate layer.
摘要:
A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction.
摘要:
A surface emitting laser includes a cavity region formed on a group-III-V compound substrate, which includes an active layer and a current confinement layer that has an aluminum oxide compound and confines a current path through which a current is injected into the active layer, an upper DBR mirror and a lower DBR mirror formed on the substrate, sandwiching the cavity region, and a graded-composition layer disposed to contact the current confinement layer, which has an aluminum composition ratio decreasing monotonically as a distance from the current confinement layer increases. The graded-composition layer includes a first region that contacts the current confinement layer and an oxidation stop layer that contacts the first region and that has a change rate of the aluminum composition ratio larger than that of the first region. The graded-composition layer is oxidized from an interface with the current confinement layer to at least a portion of the oxidation stop layer.
摘要:
A convex-portion forming layer is formed between a current-confinement aperture and a multilayer mirror, and forms a convex portion on each boundary between layers forming the multilayer mirror. The convex portion includes a plane equal to or larger than a spot size of the laser light, where the spot size is decided by a diameter of the current-confinement aperture, a predetermined diffraction angle of the laser light due to the current-confinement aperture, and a distance from the current-confinement aperture.
摘要:
Provided is a laser device comprising a substrate, an active layer, and a current confinement layer. The current confinement layer includes an oxide layer that is formed extending from a edge of the current confinement layer in a parallel plane parallel to a surface of the substrate, toward a center of the current confinement layer along the parallel plane, and that does not have an inflection point between the edge and a tip portion formed closer to the center or has a plurality of inflection points formed between the edge and the tip portion.
摘要:
A surface emitting laser includes a cavity region formed on a group-III-V compound substrate, which includes an active layer and a current confinement layer that has an aluminum oxide compound and confines a current path through which a current is injected into the active layer, an upper DBR mirror and a lower DBR mirror formed on the substrate, sandwiching the cavity region, and a graded-composition layer disposed to contact the current confinement layer, which has an aluminum composition ratio decreasing monotonically as a distance from the current confinement layer increases. The graded-composition layer includes a first region that contacts the current confinement layer and an oxidation stop layer that contacts the first region and that has a change rate of the aluminum composition ratio larger than that of the first region. The graded-composition layer is oxidized from an interface with the current confinement layer to at least a portion of the oxidation stop layer.
摘要:
Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译:包括:在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层,其由Al x Ga 1-x As(0.8& N e; x&nlE)形成的低折射率层的周期性结构 ; 1)和由AlyGa1-yAs(0< nlE; y≦̸ x)形成的高折射率层,所述低折射率层和所述高折射率层中的至少一个为n型; 以及下电极,设置在所述下多层膜反射镜和所述有源层之间,并且被配置为向所述有源层注入电流。
摘要:
A surface emitting laser includes lower and upper multilayer mirrors, first-conductivity-type and second-conductivity-type contact layers formed between the lower and the upper multilayer mirrors, an active layer formed between the first-conductivity-type and the second-conductivity-type contact layers, a current confinement layer formed between the second-conductivity-type contact layer and the active layer, and first and second composition gradient layers formed facing each other across the current confinement layer. The first composition gradient layer and the second composition gradient layer are formed such that bandgap energy of each of the layers is monotonically decreased from the current confinement layer to an adjacent layer and approach bandgap energy of the adjacent layer in a growth direction.
摘要:
Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译:包括:在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层,其由Al x Ga 1-x As(0.8 @ x @ x As)形成的低折射率层的周期性结构形成, 1)和由AlyGa1-yAs(0 @ y @ x)形成的高折射率层,低折射率层和高折射率层中的至少一个为n型; 以及下电极,设置在所述下多层膜反射镜和所述有源层之间,并且被配置为向所述有源层注入电流。
摘要:
A vertical cavity surface emitting laser element as described herein can suppress of any dislocation, when a distributed Bragg reflector (DBR) mirror is formed on the onto a substrate (1). The vertical cavity surface emitting laser can be designed so that an average of strain in the DBR mirror (2) and a layer thickness of the DBR mirror (2) are in reference to a curvature of the substrate (1) in order to satisfy a predetermined condition, and then nitrogen can be added into the DBR mirror (2) with a composition that corresponds to a designed average of strain in the DBR mirror (2). For example, the average composition of nitrogen can be designed to be between 0.028% and 0.390%.