Invention Grant
US08477529B2 Embedded magnetic random access memory (MRAM) 有权
嵌入式磁随机存取存储器(MRAM)

Embedded magnetic random access memory (MRAM)
Abstract:
A magnetic random access memory (MRAM) cell includes an embedded MRAM and an access transistor. The embedded MRAM is formed on a number of metal-interposed-in-interlayer dielectric (ILD) layers, which each include metal dispersed therethrough and are formed on top of the access transistor. An magneto tunnel junction (MTJ) is formed on top of a metal formed in the ILD layers that is in close proximity to a bit line. An MTJ mask is used to pattern the MTJ and is etched to expose the MTJ. Ultimately, metal is formed on top of the bit line and extended to contact the MTJ.
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