发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11498164申请日： 2006-08-03
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公开(公告)号： US08481370B2公开(公告)日： 2013-07-09
- 发明人: Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
- 申请人： Kazuo Nishi , Hiroki Adachi , Naoto Kusumoto , Yuusuke Sugawara , Hidekazu Takahashi , Daiki Yamada , Yoshikazu Hiura
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2003-347678 20031006
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention provides a semiconductor device having a structure that can be mounted on a wiring substrate, as for the semiconductor device formed over a thin film-thickness substrate, a film-shaped substrate, or a sheet-like substrate. In addition, the present invention provides a method for manufacturing a semiconductor device that is capable of raising a reliability of mounting on a wiring substrate. One feature of the present invention is to bond a semiconductor element formed on a substrate having isolation to a member that a conductive film is formed via a medium having an anisotropic conductivity.
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