发明授权
- 专利标题: Organic thin film transistors and methods of making the same
- 专利标题(中): 有机薄膜晶体管及其制造方法
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申请号: US12744499申请日: 2008-11-27
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公开(公告)号: US08481994B2公开(公告)日: 2013-07-09
- 发明人: Jeremy Burroughes , Craig Murphy , Gregory Whiting , Jonathan Halls
- 申请人: Jeremy Burroughes , Craig Murphy , Gregory Whiting , Jonathan Halls
- 申请人地址: GB Cambridgeshire
- 专利权人: Cambridge Display Technology Limited
- 当前专利权人: Cambridge Display Technology Limited
- 当前专利权人地址: GB Cambridgeshire
- 代理机构: Marshall, Gerstein & Borun LLP
- 优先权: GB0723262.2 20071127
- 国际申请: PCT/GB2008/003941 WO 20081127
- 国际公布: WO2009/068869 WO 20090604
- 主分类号: H01L35/24
- IPC分类号: H01L35/24
摘要:
An organic thin film transistor, and a method of making the same, comprising a source and drain electrode and organic semi-conductive material disposed therebetween in a channel region, in which the source and drain electrodes have disposed on them a thin self-assembled layer of a material comprising a dopant moiety for chemically doping the organic semi-conductive material by accepting electrons, the dopant moiety having a redox potential of at least 0.3 eV relative to a saturated calomel electrode in acetonitrile.
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