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    Organic thin film transistors and methods of making the same
    1.
    发明授权
    Organic thin film transistors and methods of making the same 有权
    有机薄膜晶体管及其制造方法

    公开(公告)号：US08481994B2

    公开(公告)日：2013-07-09

    申请号：US12744499

    申请日：2008-11-27

    申请人： Jeremy Burroughes ,  Craig Murphy ,  Gregory Whiting ,  Jonathan Halls

    发明人： Jeremy Burroughes ,  Craig Murphy ,  Gregory Whiting ,  Jonathan Halls

    IPC分类号： H01L35/24

    CPC分类号： H01L51/105 ,  H01L51/002 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic thin film transistor, and a method of making the same, comprising a source and drain electrode and organic semi-conductive material disposed therebetween in a channel region, in which the source and drain electrodes have disposed on them a thin self-assembled layer of a material comprising a dopant moiety for chemically doping the organic semi-conductive material by accepting electrons, the dopant moiety having a redox potential of at least 0.3 eV relative to a saturated calomel electrode in acetonitrile.

    摘要翻译： 一种有机薄膜晶体管及其制造方法，包括在沟道区域中设置的源极和漏极及有机半导体材料，其中源极和漏极在其上设置有薄的自组装层 包括掺杂剂部分的材料，用于通过接受电子来化学掺杂有机半导体材料，掺杂剂部分相对于乙腈中的饱和甘汞电极具有至少0.3eV的氧化还原电位。

    Organic Thin Film Transistors and Methods of Making the Same
    2.
    发明申请
    Organic Thin Film Transistors and Methods of Making the Same 有权
    有机薄膜晶体管及其制作方法

    公开(公告)号：US20110024728A1

    公开(公告)日：2011-02-03

    申请号：US12744499

    申请日：2008-11-27

    申请人： Jeremy Burroughes ,  Craig Murphy ,  Gregory Whiting ,  Jonathan Halls

    发明人： Jeremy Burroughes ,  Craig Murphy ,  Gregory Whiting ,  Jonathan Halls

    IPC分类号： H01L51/05 ,  H01L51/40

    CPC分类号： H01L51/105 ,  H01L51/002 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic thin film transistor, and a method of making the same, comprising a source and drain electrode and organic semi-conductive material disposed therebetween in a channel region, in which the source and drain electrodes have disposed on them a thin self-assembled layer of a material comprising a dopant moiety for chemically doping the organic semi-conductive material by accepting electrons, the dopant moiety having a redox potential of at least 0.3 eV relative to a saturated calomel electrode in acetonitrile.

    摘要翻译： 一种有机薄膜晶体管及其制造方法，包括在沟道区域中设置的源极和漏极及有机半导体材料，其中源极和漏极在其上设置有薄的自组装层 包括掺杂剂部分的材料，用于通过接受电子来化学掺杂有机半导体材料，掺杂剂部分相对于乙腈中的饱和甘汞电极具有至少0.3eV的氧化还原电位。

    Organic thin film transistors and methods of making them
    5.
    发明授权
    Organic thin film transistors and methods of making them 有权
    有机薄膜晶体管及其制作方法

    公开(公告)号：US08476121B2

    公开(公告)日：2013-07-02

    申请号：US13056906

    申请日：2009-08-05

    申请人： Jeremy Burroughes ,  Julian Carter ,  Euan Smith ,  Jonathan Halls ,  Thomas Kugler ,  Christopher Newsome

    发明人： Jeremy Burroughes ,  Julian Carter ,  Euan Smith ,  Jonathan Halls ,  Thomas Kugler ,  Christopher Newsome

    IPC分类号： H01L21/00

    CPC分类号： H01L51/0022 ,  H01L51/0013 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

    摘要： The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.

    摘要翻译： 本发明提供了一种制造有机薄膜晶体管（TFT）的方法，包括：提供衬底层; 提供栅电极层; 提供介电材料层; 提供有机半导体（OSC）材料层; 提供源极和漏极电极层; 并且其中使用激光诱导热成像（LITI）工艺沉积一层或多层。 优选地，有机TFT是底栅器件，并且源极和漏极电极沉积在有机半导体层上，或者使用LITI沉积在电介质材料层上。 进一步优选地，可以在OSC材料和源极和漏极电极层之间提供掺杂剂材料，其中掺杂剂材料也可以使用LITI沉积。 还优选地，其中掺杂剂可以是电荷中性掺杂剂，例如取代的TCNQ或F4TCNQ。

    Active matrix optical device
    9.
    发明授权
    Active matrix optical device 有权
    有源矩阵光学器件

    公开(公告)号：US08013328B2

    公开(公告)日：2011-09-06

    申请号：US12529295

    申请日：2008-04-03

    申请人： Jeremy Burroughes ,  Mark Bale ,  Mark Garbett ,  Jonathan Halls

    发明人： Jeremy Burroughes ,  Mark Bale ,  Mark Garbett ,  Jonathan Halls

    IPC分类号： H01L29/08

    CPC分类号： H01L27/3246 ,  H01L27/3258 ,  H01L27/3274 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0055 ,  H01L51/0545

    摘要： An active matrix organic optical device comprising a plurality of organic thin film transistors and a plurality of pixels disposed on a common substrate, wherein a common bank layer is provided for the organic thin film transistors and the pixels, the common bank layer defining a plurality of wells, wherein some of the wells contain the organic semiconducting material of the organic thin film transistors therein and others of the wells contain organic optically active material of the pixels therein.

    摘要翻译： 一种有源矩阵有机光学器件，包括多个有机薄膜晶体管和设置在公共基板上的多个像素，其中为有机薄膜晶体管和像素提供公共堤层，公共堤层限定多个 孔，其中一些阱包含有机薄膜晶体管的有机半导体材料，并且其中的阱包含其中的像素的有机光学活性材料。

    Method of Making Organic Thin Film Transistors Using a Laser Induced Thermal Transfer Printing Process
    10.
    发明申请
    Method of Making Organic Thin Film Transistors Using a Laser Induced Thermal Transfer Printing Process 有权
    使用激光诱导热转印技术制造有机薄膜晶体管的方法

    公开(公告)号：US20110186830A1

    公开(公告)日：2011-08-04

    申请号：US13056906

    申请日：2009-08-05

    申请人： Jeremy Burroughes ,  Julian Carter ,  Euan Smith ,  Jonathan Halls ,  Thomas Kugler ,  Christopher Newsome

    发明人： Jeremy Burroughes ,  Julian Carter ,  Euan Smith ,  Jonathan Halls ,  Thomas Kugler ,  Christopher Newsome

    IPC分类号： H01L51/10 ,  H01L21/20 ,  H01L51/40 ,  H01L21/28

    CPC分类号： H01L51/0022 ,  H01L51/0013 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/052 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

    摘要： The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ.

    摘要翻译： 本发明提供一种制造有机薄膜晶体管（TFT）的方法，包括：提供衬底层; 提供栅电极层; 提供介电材料层; 提供有机半导体（OSC）材料层; 提供源极和漏极电极层; 并且其中使用激光诱导热成像（LITI）工艺沉积一层或多层。 优选地，有机TFT是底栅器件，并且源极和漏极电极沉积在有机半导体层上，或者使用LITI沉积在电介质材料层上。 进一步优选地，可以在OSC材料和源极和漏极电极层之间提供掺杂剂材料，其中掺杂剂材料也可以使用LITI沉积。 还优选地，其中掺杂剂可以是电荷中性掺杂剂，例如取代的TCNQ或F4TCNQ。