Invention Grant
- Patent Title: Pressure transducer utilizing non-lead containing frit
- Patent Title (中): 压力传感器采用不含铅的玻璃料
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Application No.: US13453685Application Date: 2012-04-23
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Publication No.: US08482372B2Publication Date: 2013-07-09
- Inventor: Anthony D. Kurtz , Alexander A. Ned
- Applicant: Anthony D. Kurtz , Alexander A. Ned
- Applicant Address: US NJ Leonia
- Assignee: Kulite Semiconductor Products, Inc.
- Current Assignee: Kulite Semiconductor Products, Inc.
- Current Assignee Address: US NJ Leonia
- Agency: Troutman Sanders LLP
- Agent James E. Schutz; Jihan A. R. Jenkins
- Main IPC: G01L1/22
- IPC: G01L1/22

Abstract:
A piezoresistive sensor device and method for making the same are disclosed. The device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making the device comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the device in ultra high temperature applications.
Public/Granted literature
- US20120247219A1 PRESSURE TRANSDUCER UTILIZING NON-LEAD CONTAINING FRIT Public/Granted day:2012-10-04
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