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公开(公告)号：US08578782B2
公开(公告)日：2013-11-12
申请号：US13253139
申请日：2011-10-05
摘要： A system for measuring a multiplicity of pressures as those experienced by a model in a wind tunnel is depicted. The system includes individual sensor devices which are connected to an electronics module. The sensors may be connected to the electronics module via a cable in a first embodiment. In an alternate embodiment, the sensors may be connected to the electronics module via a mating connector located therebetween. A memory component which stores compensation coefficients associated with each of the sensors may also be included in the system to correct errors associated with each sensor. The advantage of the various embodiments is that each sensor does not have any compensation stored thereon and thus, the sensors can be made very small to operate at very high temperatures without any loss of accuracy.
摘要翻译： 描绘了一种用于测量如风洞中的模型所经历的多种压力的系统。 该系统包括连接到电子模块的各个传感器装置。 在第一实施例中，传感器可以经由电缆连接到电子模块。 在替代实施例中，传感器可以经由位于其间的匹配连接器连接到电子模块。 存储与每个传感器相关联的补偿系数的存储器组件也可以被包括在系统中以校正与每个传感器相关联的错误。 各种实施例的优点是每个传感器不存在其上的任何补偿，因此，可以使传感器非常小以在非常高的温度下操作而没有任何精度的损失。
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2.发明申请公开(公告)号：US20100107773A1
公开(公告)日：2010-05-06
申请号：US12686990
申请日：2010-01-13
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
CPC分类号： G01L1/18 , C03C27/044 , G01L1/2287 , G01L9/0042 , G01L9/0054 , G01L19/0069 , G01L19/0084 , Y10T156/10
摘要： A piezoresistive sensor device and a method for making a piezoresistive device are disclosed. The sensor device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The sensor device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The sensor device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making a piezoresistive sensor device, comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the piezoresistive sensor and associated transducer in ultra high temperature applications.
摘要翻译： 公开了压阻传感器装置和制造压阻器件的方法。 传感器装置包括具有压阻元件和与元件电连通的触点的硅晶片。 所述传感器装置还包括接触玻璃，所述接触玻璃联接到所述硅晶片并且具有与所述触点对准的孔。 传感器装置还包括用于将接触玻璃安装到集管玻璃的非导电玻璃料，以及设置在孔中并与触头电连通的导电非铅玻璃料。 用于制造压阻传感器装置的方法包括将接触玻璃接合到硅晶片，使得玻璃中的孔与晶片上的触点对齐，并用非铅玻璃料填充孔，使得玻璃料处于电 与联系人沟通。 使用无铅玻璃料防止压敏传感器和相关传感器在超高温应用中的灾难性故障。
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公开(公告)号：US07451655B2
公开(公告)日：2008-11-18
申请号：US11709639
申请日：2007-02-22
IPC分类号： G01L9/06
CPC分类号： G01L9/065
摘要： A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.
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4.发明授权公开(公告)号：US07363820B2
公开(公告)日：2008-04-29
申请号：US11585546
申请日：2006-10-24
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
IPC分类号： G01L9/00
CPC分类号： G01L19/0084 , G01L9/0055
摘要： An ultra high temperature hermetically protected transducer includes a sensor chip having an active area upon which is deposited piezoresistive sensing elements. The elements are located on the top surface of the silicon wafer chip and have leads and terminals extending from the active area of the chip. The active area is surrounded with an extending rim or frame. The active area is coated with an oxide layer which passivates the piezoresistive sensing network. The chip is then attached to a glass pedestal, which is larger in size than the sensor chip. The glass pedestal has a through hole or aperture at each corner. The entire composite structure is then mounted onto a high temperature header with the metallized regions of the header being exposed to the holes in the glass pedestal; a high temperature lead is then bonded directly to the metallized contact area of the sensor chip at one end. The leads are of sufficient length to extend into the through holes in the glass pedestal. A sealing cover is then attached to the entire composite sensor to hermetically seal all of the interconnections. The sealing cover is a glass structure, has a central aperture which corresponds to the aperture formed by the frame, allowing the active area of the sensor to be exposed to the pressure medium. The sealing cover is bonded to the periphery of the rim and to the glass supporting pedestal.
摘要翻译： 超高温密封保护换能器包括具有有源区域的传感器芯片，在该有源区域上形成压电感测元件。 这些元件位于硅晶片芯片的顶表面上并且具有从芯片的有源区域延伸的引线和端子。 活动区域被延伸的边缘或框架包围。 有源区域涂覆有钝化压阻感测网络的氧化物层。 然后将芯片连接到玻璃基座，其尺寸大于传感器芯片。 玻璃基座在每个角落都有一个通孔或孔。 然后将整个复合结构安装到高温集管上，其中集管的金属化区域暴露于玻璃基座中的孔; 然后将高温引线一端直接粘合到传感器芯片的金属化接触区域。 引线具有足够的长度以延伸到玻璃基座中的通孔中。 然后将密封盖连接到整个复合传感器以密封所有的互连。 密封盖是玻璃结构，具有对应于由框架形成的孔的中心孔，允许传感器的有效区域暴露于压力介质。 密封盖结合到边缘的周边和玻璃支撑基座上。
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公开(公告)号：US07231828B2
公开(公告)日：2007-06-19
申请号：US11234724
申请日：2005-09-23
IPC分类号： G01L9/06
CPC分类号： G01L9/065
摘要： A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.
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公开(公告)号：US5425841A
公开(公告)日：1995-06-20
申请号：US78391
申请日：1993-06-16
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
IPC分类号： G01P15/12 , H01L21/306 , B44C1/22
CPC分类号： G01P15/123 , Y10S73/01 , Y10S73/04
摘要： An electromechanical transducer is provided, and the process for making it utilizes a piezoresistive element or gage which is dielectrically isolated from a gap spanning member and substrate upon which it is supported. The gage of the invention is a force gage and is derived from a sacrificial wafer by a series of etching and bonding steps which ultimately provide a gage with substantially reduced strain energy requirements.
摘要翻译： 提供了一种机电传感器，并且其制造方法利用了压电元件或量规，该压阻元件或量规与其所支撑的间隙跨越构件和衬底介电隔离。 本发明的量具是力量计，并且通过一系列蚀刻和结合步骤从牺牲晶片获得，其最终提供具有显着降低的应变能量需求的量具。
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7.发明授权Process of bonding semiconductor wafers having conductive semiconductor material extending through each wafer at the bond areas 失效将具有导电半导体材料的半导体晶片接合在接合区域上延伸穿过每个晶片的工艺
公开(公告)号：US5401672A
公开(公告)日：1995-03-28
申请号：US292097
申请日：1994-08-17
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
CPC分类号： H01L25/0657 , H01L23/481 , H01L2225/06541 , H01L2924/0002 , Y10S148/012
摘要： A process wherein plurality of individual device layers having semiconductor material conductive regions extending therethrough are bonded together before or after one or more circuit elements have been fabricated on each layer. Groups of device layers are formed by electrochemically anodizing a wafer of semiconductor material. The wafer is rendered totally porous except for a series of non-porous regions extending therethrough. The wafer is then oxidized and densifted to result in a wafer having a plurality of electrically isolated extended contacts. A plurality of wafers are processed in this manner. A variety of integrated circuit devices are then formed on the surface of each wafer. Once the processing of all individual wafers is completed, each wafer is bonded to another, with the extending contact aligned to electrically interconnect each device layer. The wafers are then diced to provide a plurality of multi-level integrated circuit structures.
摘要翻译： 其中在每个层上制造一个或多个电路元件之前或之后，具有延伸穿过其中的半导体材料导电区域的多个单独器件层结合在一起。 通过电化学阳极氧化半导体材料的晶片形成器件层组。 除了延伸穿过其中的一系列无孔区域之外，晶片是完全多孔的。 然后将晶片氧化并致密化以产生具有多个电隔离的延伸触点的晶片。 以这种方式处理多个晶片。 然后在每个晶片的表面上形成各种集成电路器件。 一旦完成了所有单个晶片的处理，每个晶片被结合到另一个晶片，其中延伸的触点对准以电连接每个器件层。 然后切割晶片以提供多个多级集成电路结构。
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公开(公告)号：US20110239772A1
公开(公告)日：2011-10-06
申请号：US12751482
申请日：2010-03-31
CPC分类号： G01L9/0055 , G01L13/025 , G01L15/00 , G01L19/04 , Y10T29/49002
摘要： A dual diaphragm pressure transducer, or sensor, with compensation for non-pressure effects is disclosed. The pressure sensor can include two pressure transducers located on separate portions of a chip. The first pressure transducer can be a differential pressure transducer, which produces a signal proportional to one or more applied pressures and includes other non-pressure effects. The second pressure transducer can be sealed in a hermetic chamber and thus can produce a signal proportional only to non-pressure effects. The signals can be combined to produce a signal proportional to the applied pressures with no non-pressure effects. The first and second pressure transducers can be physically and/or electrically isolated to improve sealing between the two pressure transducers and prevent pressure leaks therebetween.
摘要翻译： 公开了一种具有非压力效应补偿的双隔膜压力传感器或传感器。 压力传感器可以包括位于芯片的分开部分上的两个压力传感器。 第一压力传感器可以是差压传感器，其产生与一个或多个施加压力成比例的信号，并且包括其它非压力效应。 第二压力传感器可以密封在密封室中，因此可以产生仅与非压力效应成比例的信号。 信号可以组合以产生与所施加的压力成比例的信号，而没有非压力效应。 第一和第二压力传感器可以物理和/或电隔离以改善两个压力传感器之间的密封并防止它们之间的压力泄漏。
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公开(公告)号：US20100185403A1
公开(公告)日：2010-07-22
申请号：US12321521
申请日：2009-01-22
摘要： A system for measuring a multiplicity of pressures as those experienced by a model in a wind tunnel is depicted. The system includes individual sensor devices which are connected to an Acquisition and Compensation electronics module. The individual sensor or transducer devices are semiconductor piezoresistive devices and are connected to the Acquisition and Compensation electronics module by means of a cable in a first embodiment. In an alternate embodiment the system uses connectors which connect each of the individual sensor devices to the Acquisition and Compensation electronics module via a mating connector located therein. The connectors may also include a memory which stores compensation coefficients associated with each of the various sensor devices. In this manner as described, the transducers which are small devices are connected via electrical lines or cables to the central Acquisition and Compensation electronics modules. This module houses electronics which digitally converts the data from the sensors and then compensates the data for temperature effects. The advantage of the system is that each individual sensor does not have any compensation and it can be made very small to operate at very high temperatures without any loss of accuracy. Thus, a large number of sensors can be utilized in a very small volume, even under extreme environmental conditions. It is noted that the Acquisition and Compensation electronics module can be located remotely in a safe environment outside of the wind tunnel and therefore respond extremely accurately to the pressure and temperatures subjected by the model in the wind tunnel.
摘要翻译： 描绘了一种用于测量如风洞中的模型所经历的多种压力的系统。 该系统包括连接到采集和补偿电子模块的各个传感器设备。 单独的传感器或换能器装置是半导体压阻器件，并且在第一实施例中通过电缆连接到采集和补偿电子模块。 在替代实施例中，系统使用通过位于其中的匹配连接器将各个传感器设备中的每一个连接到采集和补偿电子模块的连接器。 连接器还可以包括存储器，其存储与各种传感器装置中的每一个相关联的补偿系数。 以这种方式，小型设备的换能器通过电线或电缆连接到中央采集和补偿电子模块。 该模块内置电子设备，数字转换传感器的数据，然后补偿温度影响的数据。 该系统的优点是每个传感器不具有任何补偿，并且可以使其非常小以在非常高的温度下工作，而不会有任何的精度损失。 因此，即使在极端的环境条件下，也可以以非常小的体积使用大量的传感器。 需要注意的是，采集和补偿电子模块可以远程位于风洞外的安全环境中，因此对风洞中模型所承受的压力和温度非常准确地做出反应。
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公开(公告)号：US07436037B2
公开(公告)日：2008-10-14
申请号：US11651796
申请日：2007-01-10
申请人： Anthony D. Kurtz , Alexander A. Ned
发明人： Anthony D. Kurtz , Alexander A. Ned
IPC分类号： H01L29/84
CPC分类号： G01L19/147
摘要： A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals. The header has pins which are directed from the header terminals to enable contact to be made to the unit. Both the top and bottom surfaces of the semiconductor wafer are coated with silicon dioxide which acts to protect all the elements from deleterious substances. Thus a first pressure is applied to one surface and a second pressure is applied to the other surface to enable differential operation.
摘要翻译： 差压传感器具有具有顶表面和底表面的半导体晶片。 晶片的顶表面具有包含压阻元件的中心活动区域。 这些元件被钝化并被一层二氧化硅覆盖。 每个元件具有与其相关联的接触端子。 半导体晶片具有围绕有源区域的外周硅框架。 通过将外周框架结合到玻璃晶片的周边，通过阳极或静电键将半导体晶片接合到玻璃盖构件。 当玻璃晶片结合到硅框架时，内部二氧化硅框架与玻璃晶片形成压缩结合。 这种压接键可防止有害流体进入活性区或破坏硅。 将上述装置安装在集管上，使得玻璃晶片中的通孔与集管端子对准。 插头具有从插头端子引导的引脚，以使得能够对该单元进行接触。 半导体晶片的顶表面和底表面均涂覆有二氧化硅，其用于保护所有元素免受有害物质的影响。 因此，第一压力施加到一个表面，并且第二压力施加到另一个表面以实现差动操作。
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