Invention Grant
- Patent Title: Memory edge cell
- Patent Title (中): 内存边缘单元格
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Application No.: US13025872Application Date: 2011-02-11
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Publication No.: US08482990B2Publication Date: 2013-07-09
- Inventor: Hong-Chen Cheng , Ming-Yi Lee , Kuo-Hua Pan , Jung-Hsuan Chen , Li-Chun Tien , Cheng Hung Lee , Hung-Jen Liao
- Applicant: Hong-Chen Cheng , Ming-Yi Lee , Kuo-Hua Pan , Jung-Hsuan Chen , Li-Chun Tien , Cheng Hung Lee , Hung-Jen Liao
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A circuit comprises a first PMOS transistor, a second PMOS transistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, and a fourth NMOS transistor. The PMOS transistors and the NMOS transistors are configured to provide a first voltage reference node having a first reference voltage and a second voltage reference node having a second reference voltage. The first reference voltage and the second reference voltage serve as a first reference voltage and a second reference voltage for a memory cell, respectively.
Public/Granted literature
- US20120206953A1 MEMORY EDGE CELL Public/Granted day:2012-08-16
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