发明授权
- 专利标题： Interconnects with improved electromigration reliability
- 专利标题（中）： 互连具有改进的电迁移可靠性
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申请号： US13166988申请日： 2011-06-23
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公开(公告)号： US08486767B2公开(公告)日： 2013-07-16
- 发明人: Jun Zhai , Fei Wang
- 申请人： Jun Zhai , Fei Wang
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Harrity & Harrity, LLP
- 主分类号： H01L21/82
- IPC分类号： H01L21/82
摘要：
An interconnect structure in a semiconductor device may be formed to include a number of segments. Each segment may include a first metal. A barrier structure may be located between the plurality of segments to enable the interconnect structure to avoid electromigration problems.
公开/授权文献
- US20110250749A1 INTERCONNECTS WITH IMPROVED ELECTROMIGRATION RELIABILITY 公开/授权日：2011-10-13
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