发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13162310申请日： 2011-06-16
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公开(公告)号： US08486788B2公开(公告)日： 2013-07-16
- 发明人: Junko Iwanaga , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
- 申请人： Junko Iwanaga , Takeshi Takagi , Yoshihiko Kanzawa , Haruyuki Sorada , Tohru Saitoh , Takahiro Kawashima
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2003-078002 20030320
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.
公开/授权文献
- US20110244645A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2011-10-06
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