Thin film resistors and methods of manufacture

Invention Grant

US08486796B2 Thin film resistors and methods of manufacture 有权

Title translation: 薄膜电阻和制造方法

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Patent Title: Thin film resistors and methods of manufacture
Patent Title (中): 薄膜电阻和制造方法
Application No.: US12950635

Application Date: 2010-11-19
Publication No.: US08486796B2

Publication Date: 2013-07-16
Inventor: David L. Harmon , Joseph M. Lukaitis , Stewart E. Rauch, III , Robert R. Robison , Dustin K. Slisher , Jeffrey H. Sloan , Timothy D. Sullivan , Kimball M. Watson
Applicant: David L. Harmon , Joseph M. Lukaitis , Stewart E. Rauch, III , Robert R. Robison , Dustin K. Slisher , Jeffrey H. Sloan , Timothy D. Sullivan , Kimball M. Watson
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Roberts Mlotkowski Safran & Cole, P.C.
Agent David Cain
Main IPC: H01L21/8222
IPC: H01L21/8222 ; H01L23/62

Thin film resistors and methods of manufacture

Abstract:

A method of forming a semiconductor structure includes: forming a resistor over a substrate; forming at least one first contact in contact with the resistor; and forming at least one second contact in contact with the resistor. The resistor is structured and arranged such that current flows from the at least one first contact to the at least one second contact through a central portion of the resistor. The resistor includes at least one extension extending laterally outward from the central portion in a direction parallel to the current flow. The method includes sizing the at least one extension based on a thermal diffusion length of the resistor.

Abstract(Chinese):

一种形成半导体结构的方法包括：在衬底上形成电阻器; 形成与所述电阻器接触的至少一个第一触点; 以及形成与所述电阻器接触的至少一个第二触点。电阻器被构造和布置成使得电流从电阻器的中心部分通过至少一个第一触点流到至少一个第二触点。该电阻器包括至少一个从平行于电流的方向从中心部分横向向外延伸的延伸部分。该方法包括基于电阻器的热扩散长度来确定至少一个延伸部的尺寸。

Public/Granted literature

US20120126370A1 THIN FILM RESISTORS AND METHODS OF MANUFACTURE Public/Granted day:2012-05-24

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8222	......双极工艺