Invention Grant
- Patent Title: Trench capacitor and method for producing the same
- Patent Title (中): 沟槽电容器及其制造方法
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Application No.: US12995452Application Date: 2009-05-26
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Publication No.: US08486800B2Publication Date: 2013-07-16
- Inventor: Jin Liu , Aarnoud Laurens Roest , Freddy Roozeboom , Vahid Shabro
- Applicant: Jin Liu , Aarnoud Laurens Roest , Freddy Roozeboom , Vahid Shabro
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP08104181 20080530; WOPCT/IB2009/052201 20090526
- International Application: PCT/IB2009/052201 WO 20090526
- International Announcement: WO2009/144662 WO 20091203
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/8242 ; H01L21/336
Abstract:
A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance while being efficient in utilization of semiconductor real estate.
Public/Granted literature
- US20110073994A1 TRENCH CAPACITOR AND METHOD FOR PRODUCING THE SAME Public/Granted day:2011-03-31
Information query
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