发明授权
- 专利标题： Trench capacitor and method for producing the same
- 专利标题（中）： 沟槽电容器及其制造方法
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申请号： US12995452申请日： 2009-05-26
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公开(公告)号： US08486800B2公开(公告)日： 2013-07-16
- 发明人: Jin Liu , Aarnoud Laurens Roest , Freddy Roozeboom , Vahid Shabro
- 申请人： Jin Liu , Aarnoud Laurens Roest , Freddy Roozeboom , Vahid Shabro
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP08104181 20080530; WOPCT/IB2009/052201 20090526
- 国际申请： PCT/IB2009/052201 WO 20090526
- 国际公布： WO2009/144662 WO 20091203
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/8242 ; H01L21/336
摘要：
A method of fabricating a trench capacitor, and a trench capacitor fabricated thereby, are disclosed. The method involves the use of a vacuum impregnation process for a sol-gel film, to facilitate effective deposition of high-permittivity materials within a trench in a semiconductor substrate, to provide a trench capacitor having a high capacitance while being efficient in utilization of semiconductor real estate.
公开/授权文献
- US20110073994A1 TRENCH CAPACITOR AND METHOD FOR PRODUCING THE SAME 公开/授权日：2011-03-31
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