Invention Grant
US08488356B2 Memory system with multi-level status signaling and method for operating the same
有权
具有多级状态信号的存储器系统及其操作方法
- Patent Title: Memory system with multi-level status signaling and method for operating the same
- Patent Title (中): 具有多级状态信号的存储器系统及其操作方法
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Application No.: US13430548Application Date: 2012-03-26
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Publication No.: US08488356B2Publication Date: 2013-07-16
- Inventor: Steven Cheng
- Applicant: Steven Cheng
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Martine Penilla Group, LLP
- Main IPC: G11C5/06
- IPC: G11C5/06

Abstract:
A memory system includes a status circuit having a common status node electrically connected to a respective status pad of each of a plurality of memory chips. The memory system also includes a plurality of resistors disposed within the status circuit to define a voltage divider network for generating different voltage levels at the common status node. Each of the different voltage levels indicates a particular operational state combination of the plurality of memory chips. Also, each of the plurality of memory chips is either in a first operational state or a second operational state. Additionally, the different voltage levels are distributed within a voltage range extending from a power supply voltage level to a reference ground voltage level.
Public/Granted literature
- US20120182780A1 Memory System with Multi-Level Status Signaling and Method for Operating the Same Public/Granted day:2012-07-19
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