发明授权
US08488381B2 Non-volatile memory device having vertical structure and method of operating the same
有权
具有垂直结构的非易失性存储器件及其操作方法
- 专利标题： Non-volatile memory device having vertical structure and method of operating the same
- 专利标题（中）： 具有垂直结构的非易失性存储器件及其操作方法
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申请号： US12860049申请日： 2010-08-20
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公开(公告)号： US08488381B2公开(公告)日： 2013-07-16
- 发明人: Doogon Kim , Sunil Shim , Hansoo Kim , Wonseok Cho , Jaehoon Jang , Jaehun Jeong
- 申请人： Doogon Kim , Sunil Shim , Hansoo Kim , Wonseok Cho , Jaehoon Jang , Jaehun Jeong
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Onello & Mello, LLP
- 优先权： KR10-2009-0008041 20090202; KR10-2009-0083148 20090903; KR10-2010-0006475 20100125
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
Provided is a method of operating a non-volatile memory device. The method includes applying a turn-on voltage to each of first and second string select transistors of a first NAND string, applying first and second voltages to third and fourth string select transistors of a second NAND string, respectively, and applying a high voltage to word lines connected with memory cells of the first and second NAND strings.
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