Invention Grant
US08492185B1 Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
有权
大面积的非极性或半极性的含镓和氮的衬底和所产生的器件
- Patent Title: Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
- Patent Title (中): 大面积的非极性或半极性的含镓和氮的衬底和所产生的器件
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Application No.: US13548931Application Date: 2012-07-13
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Publication No.: US08492185B1Publication Date: 2013-07-23
- Inventor: Mark P. D'Evelyn , James Speck , William Houck , Mathew Schmidt , Arpan Chakraborty
- Applicant: Mark P. D'Evelyn , James Speck , William Houck , Mathew Schmidt , Arpan Chakraborty
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for fabricating large-area nonpolar or semipolar GaN wafers with high quality, low stacking fault density, and relatively low dislocation density is described. The wafers are useful as seed crystals for subsequent bulk growth or as substrates for LEDs and laser diodes.
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