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    High indium containing InGaN substrates for long wavelength optical devices
    2.
    发明授权
    High indium containing InGaN substrates for long wavelength optical devices 有权
    用于长波长光学器件的高含铟InGaN衬底

    公开(公告)号：US08306081B1

    公开(公告)日：2012-11-06

    申请号：US12785404

    申请日：2010-05-21

    申请人： Mathew Schmidt ,  Mark P. D'Evelyn

    发明人： Mathew Schmidt ,  Mark P. D'Evelyn

    IPC分类号： H01S5/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3211

    摘要： An improved optical device. The device has a gallium nitride substrate member comprising indium entities, gallium entities, and nitrogen entities. In one or more embodiments, the gallium nitride substrate member has an indium content ranging from about 1 to about 50% in weight. Preferably, the gallium nitride substrate member has a semipolar crystalline surface region or a non-polar crystalline surface region. The device has an epitaxially formed laser stripe region comprising an indium content ranging from about 1 to about 50% and formed overlying a portion of the semipolar crystalline orientation surface region or the non-polar crystalline surface region. The laser stripe region is characterized by a cavity orientation in a predefined direction according to a specific embodiment. The laser strip region has a first end and a second end including respective a first cleaved facet provided on the first end of the laser stripe region and a second cleaved facet provided on the second end of the laser stripe region.

    摘要翻译： 改进的光学装置。 该器件具有包括铟实体，镓实体和氮实体的氮化镓衬底构件。 在一个或多个实施例中，氮化镓衬底构件的铟含量为约1至约50重量％。 优选地，氮化镓衬底构件具有半极性结晶表面区域或非极性结晶表面区域。 该器件具有外延形成的激光条纹区域，其包含范围为约1至约50％的铟含量并且形成在半极性晶体取向表面区域或非极性晶体表面区域的一部分上。 根据具体实施例，激光条纹区域的特征在于沿着预定方向的空腔取向。 激光带区具有第一端和第二端，其包括设置在激光条区域的第一端上的第一切割小面和设置在激光条纹区域的第二端上的第二切割小面。