发明授权
- 专利标题： Three dimensional integration and methods of through silicon via creation
- 专利标题（中）： 通过创建三维集成和通过硅的方法
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申请号： US13422445申请日： 2012-03-16
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公开(公告)号： US08492252B2公开(公告)日： 2013-07-23
- 发明人: Mukta G. Farooq , Emily R. Kinser , Richard Wise , Hakeem Yusuff
- 申请人： Mukta G. Farooq , Emily R. Kinser , Richard Wise , Hakeem Yusuff
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Katherine Brown
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, forming doped portions of the substrate layer in the first planar area, removing a portion of the photoresist to form a second opening defining a second planar area on the substrate layer, and etching to form a first cavity having a first depth defined by the first opening to expose a first contact in the structure and to form a second cavity defined by the second opening to expose a second contact in the structure.
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