发明授权
- 专利标题： Light-emitting device and manufacturing method thereof
- 专利标题（中）： 发光元件及其制造方法
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申请号： US12848375申请日： 2010-08-02
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公开(公告)号： US08492764B2公开(公告)日： 2013-07-23
- 发明人: Shunpei Yamazaki , Masayuki Sakakura , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Yoshiaki Oikawa
- 申请人： Shunpei Yamazaki , Masayuki Sakakura , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba , Yoshiaki Oikawa
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semicondcutor Energy Laboratory Co., Ltd.
- 当前专利权人： Semicondcutor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2009-185252 20090807
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336 ; H01L33/00
摘要：
A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.
公开/授权文献
- US20110031496A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2011-02-10
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