公开(公告)号：US08742422B2

公开(公告)日：2014-06-03

申请号：US12871148

申请日：2010-08-30

申请人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

发明人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L27/124 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1255

摘要： The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

摘要翻译： 半导体器件包括驱动器电路部分，其包括驱动器电路和包括像素的像素部分。 像素包括具有透光性的栅极电极层，栅极绝缘层，源极电极层和漏极电极层，其各自具有设置在栅极绝缘层上的透光性，覆盖顶表面的氧化物半导体层和 源极电极层和漏极电极层的侧面，并且在栅电极层之间设置有栅极绝缘层，导电层设置在氧化物半导体层的一部分上，并且具有比源极电极层和漏极 电极层和与氧化物半导体层的一部分接触的氧化物绝缘层。

公开(公告)号：US08492764B2

公开(公告)日：2013-07-23

申请号：US12848375

申请日：2010-08-02

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L27/1225 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/5278 ,  H01L2251/5323

摘要： A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel.

摘要翻译： 包括根据多种电路的特性，在一个基板上形成多种电路的多个薄膜晶体管的发光器件。 包括与源极和漏极层重叠的氧化物半导体层的倒置共面薄膜晶体管用作像素的薄膜晶体管，通道停止薄膜晶体管用作用于驱动电路的薄膜晶体管， 并且在用于像素的薄膜晶体管和发光元件之间设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

公开(公告)号：US08488077B2

公开(公告)日：2013-07-16

申请号：US13363405

申请日：2012-02-01

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC分类号： G02F1/136

CPC分类号： H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

公开(公告)号：US08378344B2

公开(公告)日：2013-02-19

申请号：US12869327

申请日：2010-08-26

申请人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

发明人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

IPC分类号： H01L29/10

CPC分类号： H01L27/1225 ,  H01L27/322 ,  H01L27/3262

摘要： It is an object to provide a light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors corresponding to characteristics of the plural kinds of circuits are provided. An inverted coplanar thin film transistor in which an oxide semiconductor layer overlaps with a source electrode layer and a drain electrode layer is used for a pixel, and a channel-etched thin film transistor is used for a driver circuit. A color filter layer is provided between the pixel thin film transistor and a light-emitting element which is electrically connected to the pixel thin film transistor so as to overlap with the light-emitting element.

摘要翻译： 本发明的目的是提供一种在一个衬底上形成多种电路的发光器件，并且提供与多种电路的特性对应的多种薄膜晶体管。 将其中与源电极层和漏电极层重叠的氧化物半导体层用于像素的反转共面薄膜晶体管，并且将沟道蚀刻薄膜晶体管用于驱动器电路。 像素薄膜晶体管和与像素薄膜晶体管电连接以与发光元件重叠的发光元件设置滤色器层。

公开(公告)号：US08115883B2

公开(公告)日：2012-02-14

申请号：US12861190

申请日：2010-08-23

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC分类号： G02F1/136

CPC分类号： H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

摘要翻译： 本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。 驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。 像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。 像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。

公开(公告)号：US08890166B2

公开(公告)日：2014-11-18

申请号：US12871184

申请日：2010-08-30

申请人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

发明人： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/32 ,  H01L27/12

CPC分类号： H01L27/1251 ,  H01L27/1225 ,  H01L27/322 ,  H01L27/3262

摘要： An object of the present invention is to provide a light-emitting device in which plural kinds of circuits are formed over the same substrate, and plural kinds of thin film transistors are provided in accordance with characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor, an oxide semiconductor layer of which overlaps with a source and drain electrode layers, and a channel-etched thin film transistor are used as a thin film transistor for a pixel and a thin film transistor for a driver circuit, respectively. Between the thin film transistor for a pixel and a light-emitting element, a color filter layer is provided so as to overlap with the light-emitting element which is electrically connected to the thin film transistor for a pixel.

摘要翻译： 本发明的目的是提供一种在同一基板上形成多种电路的发光器件，并且根据多种电路的特性提供多种薄膜晶体管。 作为用于像素的薄膜晶体管和用于驱动电路的薄膜晶体管，使用反向共面薄膜晶体管，其与源极和漏极层重叠的氧化物半导体层和沟道蚀刻薄膜晶体管 ， 分别。 在用于像素的薄膜晶体管和发光元件之间，设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

公开(公告)号：US08218099B2

公开(公告)日：2012-07-10

申请号：US12871162

申请日：2010-08-30

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Yoshiaki Oikawa

IPC分类号： G02F1/136

CPC分类号： H01L27/1225

摘要： An object is to provide an active matrix liquid crystal display device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors are provided corresponding to characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor including an oxide semiconductor layer which is over and overlaps with a source electrode layer and a drain electrode layer is used for a pixel thin film transistor. A channel-protective thin film transistor is used for a driver-circuit thin film transistor is used. In addition, main parts of the pixel thin film transistor are formed using a light-transmitting material, so that the aperture ratio is increased.

摘要翻译： 本发明提供一种有源矩阵液晶显示装置，其中在一个基板上形成多种电路，并且根据多种电路的特性设置多种薄膜晶体管。 包括与源电极层和漏电极层重叠的氧化物半导体层的倒共面薄膜晶体管用于像素薄膜晶体管。 使用通道保护薄膜晶体管用于驱动电路薄膜晶体管。 此外，使用透光材料形成像素薄膜晶体管的主要部分，使得开口率增加。

公开(公告)号：US08421067B2

公开(公告)日：2013-04-16

申请号：US12846572

申请日：2010-07-29

申请人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Junichiro Sakata

IPC分类号： H01L29/12

CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L29/7869

摘要： A semiconductor device having a structure which enables sufficient reduction in parasitic capacitance is provided. In addition, the operation speed of thin film transistors in a driver circuit is improved. In a bottom-gate thin film transistor in which an oxide insulating layer is in contact with a channel formation region in an oxide semiconductor layer, a source electrode layer and a drain electrode layer are formed in such a manner that they do not overlap with a gate electrode layer. Thus, the distance between the gate electrode layer and the source electrode layer and between the gate electrode layer and the drain electrode layer are increased; accordingly, parasitic capacitance can be reduced.

摘要翻译： 提供具有能够充分降低寄生电容的结构的半导体器件。 此外，提高了驱动电路中薄膜晶体管的操作速度。 在其中氧化物绝缘层与氧化物半导体层中的沟道形成区域接触的底栅薄膜晶体管中，以与它们不重叠的方式形成源电极层和漏电极层 栅电极层。 因此，栅极电极层与源电极层之间以及栅极电极层和漏极电极层之间的距离增加; 因此，可以减小寄生电容。

公开(公告)号：US20110084266A1

公开(公告)日：2011-04-14

申请号：US12897419

申请日：2010-10-04

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/78696

摘要： In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

摘要翻译： 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。

公开(公告)号：US08309961B2

公开(公告)日：2012-11-13

申请号：US12897419

申请日：2010-10-04

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC分类号： H01L29/04

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/45 ,  H01L29/78606 ,  H01L29/78696

摘要： In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

摘要翻译： 在使用氧化物半导体形成沟道形成区域的沟道保护薄膜晶体管中，使用通过热处理脱水或脱氢的氧化物半导体层作为有源层，包括纳米晶体的晶体区域包含在表面 并且其余部分是无定形的或由非晶/非晶体和微晶体的混合物形成，其中非晶区域用微晶点缀。 通过使用具有这种结构的氧化物半导体层，可以防止由于进入水分或从表面部分去除氧气或从表面部分排出而引起的n型变化和产生寄生通道，并且与源极接触电阻 可以减少漏电极。