发明授权
- 专利标题： Through silicon via direct FET signal gating
- 专利标题（中）： 通过硅通过直接FET信号门控
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申请号： US13171919申请日： 2011-06-29
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公开(公告)号： US08492903B2公开(公告)日： 2013-07-23
- 发明人: Gerald K. Bartley , Philip R. Germann , David P. Paulsen , John E. Sheets, II
- 申请人： Gerald K. Bartley , Philip R. Germann , David P. Paulsen , John E. Sheets, II
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Jim Boice
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A system comprises a first integrated circuit (IC) chip that includes a first electronic component; a second IC chip that includes a second electronic component; a through silicon via (TSV) in the second IC chip that electrically couples the first electronic component to the second electronic component; and a signal gating transistor that fully occludes the TSV.
公开/授权文献
- US20130001676A1 THROUGH SILICON VIA DIRECT FET SIGNAL GATING 公开/授权日：2013-01-03
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