Invention Grant
- Patent Title: Low minimum power supply voltage level shifter
- Patent Title (中): 低最小电源电压电平转换器
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Application No.: US12843479Application Date: 2010-07-26
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Publication No.: US08493124B2Publication Date: 2013-07-23
- Inventor: Chan-Hong Chern , Fu-Lung Hsueh , Ming-Chieh Huang , Chih-Chang Lin
- Applicant: Chan-Hong Chern , Fu-Lung Hsueh , Ming-Chieh Huang , Chih-Chang Lin
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A level shifter includes one PMOS and two NMOS transistors. A source of the first NMOS transistor is coupled to a low power supply voltage. An input signal is coupled to a gate of the first NMOS transistor and a source of the second NMOS transistor. The input signal has a voltage level up to a first power supply voltage. A source of the PMOS transistor is coupled to a second power supply voltage, higher than the first power supply voltage. An output signal is coupled between the PMOS and the first NMOS transistors. The first NMOS transistor is arranged to pull down the output signal when the input signal is a logical 1, and the second NMOS transistor is arranged to enable the PMOS transistor to pull up the output signal to a logical 1 at the second power supply voltage when the input signal is a logical 0.
Public/Granted literature
- US20120019302A1 LOW MINIMUM POWER SUPPLY VOLTAGE LEVEL SHIFTER Public/Granted day:2012-01-26
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