发明授权
- 专利标题: MRAM with current-based self-referenced read operations
- 专利标题(中): MRAM具有基于当前的自引用读操作
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申请号: US13364756申请日: 2012-02-02
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公开(公告)号: US08493776B1公开(公告)日: 2013-07-23
- 发明人: Hung-Chang Yu , Kai-Chun Lin , Yu-Der Chih , Chun-Jung Lin
- 申请人: Hung-Chang Yu , Kai-Chun Lin , Yu-Der Chih , Chun-Jung Lin
- 申请人地址: TW Hsin-chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-chu
- 代理机构: Duane Morris LLP
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
A magnetoresistive memory stores logic values in high and low resistance states of magnetic tunnel junction elements. Instead of comparing the resistance of elements to a fixed threshold to discern a logic state, the resistances of elements are self-compared before and after imposing a low resistance state. A measure of the resistance of an element in its unknown resistance state is stored, for example by charging a capacitor to a voltage produced when read current bias is applied. Then the element is written into its low resistance state and read current bias is applied again to develop another voltage, representing the low resistance state. A comparison circuit using current summing and an offset providing a minimum difference tolerance determines whether the resistance of the element was changed or remained the same. This determines the logic state of the element.
公开/授权文献
- US20130201754A1 MRAM WITH CURRENT-BASED SELF-REFERENCED READ OPERATIONS 公开/授权日:2013-08-08