Invention Grant
US08493777B2 Non-volatile perpendicular magnetic memory with low switching current and high thermal stability
有权
具有低开关电流和高热稳定性的非易失性垂直磁存储器
- Patent Title: Non-volatile perpendicular magnetic memory with low switching current and high thermal stability
- Patent Title (中): 具有低开关电流和高热稳定性的非易失性垂直磁存储器
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Application No.: US13453940Application Date: 2012-04-23
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Publication No.: US08493777B2Publication Date: 2013-07-23
- Inventor: Rajiv Yadav Ranjan , Parviz Keshtbod
- Applicant: Rajiv Yadav Ranjan , Parviz Keshtbod
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: IPxLAW Group LLP
- Agent Maryam Imam
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The non-volatile current-switching magnetic memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer with a perpendicular anisotropy that is formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer, and a top electrode formed on top of the cap layer.
Public/Granted literature
- US20120212998A1 Non-Volatile Perpendicular Magnetic Memory with Low Switching Current and High Thermal Stability Public/Granted day:2012-08-23
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