发明授权
- 专利标题: Field-aided preferential deposition of precursors
- 专利标题(中): 现场辅助优先沉积前体
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申请号: US12383588申请日: 2009-03-24
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公开(公告)号: US08496999B2公开(公告)日: 2013-07-30
- 发明人: Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
- 申请人: Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
- 申请人地址: US CA Palo Alto JP Tokyo
- 专利权人: The Board of Trustees of the Leland Stanford Junior University,Honda Motor Co., Ltd
- 当前专利权人: The Board of Trustees of the Leland Stanford Junior University,Honda Motor Co., Ltd
- 当前专利权人地址: US CA Palo Alto JP Tokyo
- 代理机构: Lumen Patent Firm
- 主分类号: C23C16/02
- IPC分类号: C23C16/02
摘要:
Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.
公开/授权文献
- US20090258157A1 Field-aided preferential deposition of precursors 公开/授权日:2009-10-15