摘要:
Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.
摘要:
Lateral nano-scale pattern control for atomic layer deposition can be provided by using a scanning tunneling microscope (SPM) tip to locally influence chemical reaction rates. An electric field and/or charge transfer can significantly reduce the potential energy barrier that affects reaction kinetics, and thereby significantly enhance reaction rates. By operating the ALD growth system in a regime where reaction rates without an electric field and/or charge transfer are negligible, deposition can be precisely controlled to occur only at locations defined by the SPM tip. Alternatively, the SPM tip can be used to locally inhibit ALD growth.
摘要:
A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.
摘要:
A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.
摘要:
A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.
摘要:
A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.
摘要:
Efficient photovoltaic devices with quantum dots are provided. Quantum dots have numerous desirable properties that can be used in solar cells, including an easily selected bandgap and Fermi level. In particular, the size and composition of a quantum dot can determine its bandgap and Fermi level. By precise deposition of quantum dots in the active layer of a solar cell, bandgap gradients can be present for efficient sunlight absorption, exciton dissociation, and charge transport. Mismatching Fermi levels are also present between adjacent quantum dots, allowing for built-in electric fields to form and aid in charge transport and the prevention of exciton recombination.
摘要:
Apparatus for incrementally altering the position of an object. The apparatus incrementally rotatably advances a turret by sequentially displacing a plurality of plungers. Each plunger when displaced moves along a linear axis to slidably contact and move along a sloped surface on the turret to generate a lateral force which incrementally rotates the turret a desired distance.
摘要:
Apparatus utilized in combination with a carriage reciprocating between a primary base position and a second position spaced away from the primary base position. The apparatus varies the distance of the second position of the carriage from the primary base portion of the carriage and includes a stop surface on the carriage and a plurality of secondary stop surfaces operatively associated with the carriage stop surface. The secondary stop surfaces are each movable between at least two operative positions, a first operative position in which one of the secondary stop surfaces contacts the carriage stop surface when the carriage is moving away from its primary base position, and, a second operative position in which another of the secondary stop surfaces contacts the carriage stop surface when the carriage is moving from its primary base position. When a secondary stop surface contacts the carriage stop surface, the carriage is halted in its second position. Movement of the secondary stop surface between their first and second operative positions is activated by a control mechanism carried on the reciprocating carriage.
摘要:
A vane-type hydraulically powered rotary actuator having a shaft provided with a radially extending vane. The shaft is rotatably carried inside a generally cylindrical actuator chamber formed in the housing of the rotary actuator. The vane includes a pair of end walls which move adjacent the actuator housing during operation of the rotary actuator. Improved means are provided for sealing the space between the end walls of the vane and the actuator housing during operation of the actuator.