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公开(公告)号：US08496999B2
公开(公告)日：2013-07-30
申请号：US12383588
申请日：2009-03-24
申请人： Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
发明人： Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
IPC分类号： C23C16/02
CPC分类号： C23C16/047 , C23C16/45536 , C23C16/45544 , G01Q30/02 , G01Q80/00
摘要： Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.
摘要翻译： 通过包括以下步骤的方法提供区域选择性原子层沉积。 首先，提供基板。 其次，扫描探针显微镜（SPM）的尖端设置在基板的表面附近。 然后在尖端和表面之间建立电位，导致在尖端附近产生一个或多个局部电效应。 提供用于原子层沉积（ALD）的沉积反应物，并且由于局部增强的ALD反应速率，由局部电效应限定的图案沉积。
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公开(公告)号：US20090258157A1
公开(公告)日：2009-10-15
申请号：US12383588
申请日：2009-03-24
申请人： Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
发明人： Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
IPC分类号： B05D3/14
CPC分类号： C23C16/047 , C23C16/45536 , C23C16/45544 , G01Q30/02 , G01Q80/00
摘要： Lateral nano-scale pattern control for atomic layer deposition can be provided by using a scanning tunneling microscope (SPM) tip to locally influence chemical reaction rates. An electric field and/or charge transfer can significantly reduce the potential energy barrier that affects reaction kinetics, and thereby significantly enhance reaction rates. By operating the ALD growth system in a regime where reaction rates without an electric field and/or charge transfer are negligible, deposition can be precisely controlled to occur only at locations defined by the SPM tip. Alternatively, the SPM tip can be used to locally inhibit ALD growth.
摘要翻译： 可以通过使用扫描隧道显微镜（SPM）尖端来局部影响化学反应速率来提供用于原子层沉积的横向纳米尺度图案控制。 电场和/或电荷转移可以显着降低影响反应动力学的势垒，从而显着提高反应速率。 通过在没有电场和/或电荷转移的反应速率可忽略的情况下操作ALD生长系统，可以精确地控制沉积仅在由SPM尖端限定的位置处发生。 或者，SPM尖端可用于局部抑制ALD生长。
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3.发明授权公开(公告)号：US08296859B2
公开(公告)日：2012-10-23
申请号：US12383467
申请日：2009-03-23
申请人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu , Wonyoung Lee
发明人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu , Wonyoung Lee
IPC分类号： G01N13/10
CPC分类号： C23C16/047 , G01Q30/02
摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.
摘要翻译： 提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离 ，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。 根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。
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公开(公告)号：US08499361B2
公开(公告)日：2013-07-30
申请号：US13548845
申请日：2012-07-13
申请人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrel Iancu , Wonyoung Lee
发明人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrel Iancu , Wonyoung Lee
IPC分类号： H01J37/06
CPC分类号： C23C16/047 , G01Q30/02
摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.
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5.发明申请公开(公告)号：US20120284882A1
公开(公告)日：2012-11-08
申请号：US13548845
申请日：2012-07-13
申请人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrel Iancu , Wonyoung Lee
发明人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrel Iancu , Wonyoung Lee
CPC分类号： C23C16/047 , G01Q30/02
摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.
摘要翻译： 提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离 ，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。 根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。
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6.发明申请公开(公告)号：US20090241232A1
公开(公告)日：2009-09-24
申请号：US12383467
申请日：2009-03-23
申请人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu , Wonyoung Lee
发明人： James F. Mack , Neil Dasgupta , Timothy P. Holme , Friedrich B. Prinz , Andrei Iancu , Wonyoung Lee
CPC分类号： C23C16/047 , G01Q30/02
摘要： A localized nanostructure growth apparatus that has a partitioned chamber is provided, where a first partition includes a scanning probe microscope (SPM) and a second partition includes an atomic layer deposition (ALD) chamber, where the first partition is hermetically isolated from the second partition, and at least one SPM probe tip of the SPM is disposed proximal to a sample in the ALD chamber. According to the invention, the hermetic isolation between the chambers prevents precursor vapor from damaging critical microscope components and ensuring that contaminants in the ALD chamber can be minimized.
摘要翻译： 提供了具有分隔室的局部纳米结构生长装置，其中第一分区包括扫描探针显微镜（SPM），第二分区包括原子层沉积（ALD）室，其中第一分区与第二分区气密隔离 ，并且SPM的至少一个SPM探针尖端设置在ALD室中的样品的近侧。 根据本发明，室之间的密封隔离防止前体蒸汽损坏关键的显微镜部件，并确保ALD室中的污染物可以最小化。
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7.发明申请公开(公告)号：US20100240167A1
公开(公告)日：2010-09-23
申请号：US12661778
申请日：2010-03-23
IPC分类号： H01L31/18 , H01L31/0352
CPC分类号： C23C16/45525 , B82Y20/00 , C23C16/408 , H01L21/02521 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L21/02603 , H01L21/02628 , H01L31/032 , H01L31/0352 , H01L31/035236 , H01L31/0384 , H01L31/075 , Y02E10/548
摘要： The current invention provides a method of fabricating quantum confinement (QC) in a solar cell that includes using atomic layer deposition (ALD) for providing at least one QC structure embedded into an intrinsic region of a p-i-n diode in the solar cell, where optical and electrical properties of the confinement structure are adjusted according to at least one dimension of the confinement structure. The QC structures can include quantum wells, quantum wires, quantum tubes, and quantum dots.
摘要翻译： 本发明提供了一种在太阳能电池中制造量子限制（QC）的方法，其包括使用原子层沉积（ALD）来提供嵌入到太阳能电池中的pin二极管的本征区域中的至少一个QC结构，其中光学和 根据约束结构的至少一个维度来调整约束结构的电性能。 QC结构可以包括量子阱，量子线，量子管和量子点。
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公开(公告)号：US20090238990A1
公开(公告)日：2009-09-24
申请号：US12383587
申请日：2009-03-24
CPC分类号： C23C16/45525 , B82B3/00 , B82Y30/00 , B82Y40/00 , C23C16/047 , C30B25/04 , C30B25/165 , C30B29/16
摘要： Improved tip-patterned atomic layer deposition (ALD) is provided by using a scanning probe microscope (SPM) tip to define an oxide pattern in a self-assembled monolayer deposited on a substrate. The oxide pattern can directly define the ALD deposition pattern. Alternatively, the oxide pattern can be removed (e.g., with a chemical etch), and the resulting exposed substrate pattern can be used to define the ALD deposition pattern.
摘要翻译： 通过使用扫描探针显微镜（SPM）尖端提供改进的尖端图案化原子层沉积（ALD），以在沉积在基底上的自组装单层中限定氧化物图案。 氧化物图案可以直接限定ALD沉积图案。 或者，可以去除氧化物图案（例如，通过化学蚀刻），并且所得到的曝光的基底图案可用于限定ALD沉积图案。
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公开(公告)号：US09021378B2
公开(公告)日：2015-04-28
申请号：US13070590
申请日：2011-03-24
申请人： Kanghee Kim , Wonyoung Lee
发明人： Kanghee Kim , Wonyoung Lee
IPC分类号： G06F3/0488
CPC分类号： G06F3/04886
摘要： A mobile terminal and a method for controlling a virtual key pad thereof are disclosed. The mobile terminal identifies a touch pattern of a touch action of each of a plurality of virtual keys, and changes at least one of an area and position of a sensing zone corresponding to each of the plurality of virtual keys to correspond to the identified touch pattern.
摘要翻译： 公开了一种移动终端及其虚拟键盘的控制方法。 移动终端识别多个虚拟键中的每一个的触摸动作的触摸模式，并且改变与多个虚拟键中的每一个相对应的感测区域的区域和位置中的至少一个以对应于所识别的触摸模式 。
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公开(公告)号：US20120030604A1
公开(公告)日：2012-02-02
申请号：US13070590
申请日：2011-03-24
申请人： Kanghee KIM , Wonyoung Lee
发明人： Kanghee KIM , Wonyoung Lee
CPC分类号： G06F3/04886
摘要： A mobile terminal and a method for controlling a virtual key pad thereof are disclosed. The mobile terminal identifies a touch pattern of a touch action of each of a plurality of virtual keys, and changes at least one of an area and position of a sensing zone corresponding to each of the plurality of virtual keys to correspond to the identified touch pattern.
摘要翻译： 公开了一种移动终端及其虚拟键盘的控制方法。 移动终端识别多个虚拟键中的每一个的触摸动作的触摸模式，并且改变与多个虚拟键中的每一个相对应的感测区域的区域和位置中的至少一个以对应于所识别的触摸模式 。
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