发明授权
US08497062B2 Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method
有权
用于形成上部抗反射膜的树脂，用于形成上部抗反射膜的组合物和抗蚀剂图案形成方法
- 专利标题： Resin for formation of upper antireflective film, composition for formation of upper antireflective film, and resist pattern formation method
- 专利标题（中）： 用于形成上部抗反射膜的树脂，用于形成上部抗反射膜的组合物和抗蚀剂图案形成方法
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申请号： US12530624申请日： 2008-03-13
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公开(公告)号： US08497062B2公开(公告)日： 2013-07-30
- 发明人: Norihiro Natsume , Norihiko Sugie , Junichi Takahashi
- 申请人： Norihiro Natsume , Norihiko Sugie , Junichi Takahashi
- 申请人地址： JP Tokyo
- 专利权人： JSR Corporation
- 当前专利权人： JSR Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Ditthavong Mori & Steiner, P.C.
- 优先权： JP2007-077689 20070323; JP2007-085726 20070328
- 国际申请： PCT/JP2008/054658 WO 20080313
- 国际公布： WO2008/126625 WO 20081023
- 主分类号： G03F7/32
- IPC分类号： G03F7/32 ; C08F12/32 ; G03F7/11
摘要：
The objective of the present invention is to provide a resin for forming an upper antireflective film and a composition for forming an upper antireflective film that can reduce a standing wave effect satisfactorily and lead excellent solubility in an alkaline developer in lithography and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1,000 to 100,000 as measured by GPC method, and is soluble in an alkaline developer. (In the formulae (1) and (2), R1 to R14 independently represent a hydrogen atom, —OH, —COOH or —SO3H, provided that all of R1 to R7 or R8 to R14 do not represent a hydrogen atom in a molecule.)