发明授权
- 专利标题： Positive-type radiation-sensitive composition, and resist pattern formation method
- 专利标题（中）： 正型辐射敏感组合物和抗蚀剂图案形成方法
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申请号： US13005536申请日： 2011-01-13
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公开(公告)号： US08501385B2公开(公告)日： 2013-08-06
- 发明人: Yusuke Anno , Kouichi Fujiwara , Makoto Sugiura , Gouji Wakamatsu
- 申请人： Yusuke Anno , Kouichi Fujiwara , Makoto Sugiura , Gouji Wakamatsu
- 申请人地址： JP Tokyo
- 专利权人： JSR Corporation
- 当前专利权人： JSR Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Ditthavong Mori & Steiner, P.C.
- 优先权： JP2008-184103 20080715; JP2009-080196 20090327
- 主分类号： G03C1/00
- IPC分类号： G03C1/00 ; G03F1/00
摘要：
A positive-tone radiation-sensitive composition is used in a resist pattern-forming method as a first positive-tone radiation-sensitive composition. A positive-tone radiation-sensitive composition includes a polymer, a photoacid generator, and a solvent. The polymer includes an acid-labile group and a crosslinkable group. The resist pattern-forming method includes providing the first positive-tone radiation-sensitive composition on a substrate to form a first resist pattern on the substrate. The first resist pattern is made to be inactive to light or heat so that the first resist pattern is insoluble in a second positive-tone radiation-sensitive composition. The second positive-tone radiation-sensitive composition is provided on the substrate to form a second resist pattern on the substrate on which the first resist pattern is formed.
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