发明授权
US08501618B2 Semiconductor device and method of forming RDL wider than contact pad along first axis and narrower than contact pad along second axis
有权
半导体器件和沿着第一轴形成RDL比接触焊盘宽的第二轴的窄接触焊盘的方法
- 专利标题： Semiconductor device and method of forming RDL wider than contact pad along first axis and narrower than contact pad along second axis
- 专利标题（中）： 半导体器件和沿着第一轴形成RDL比接触焊盘宽的第二轴的窄接触焊盘的方法
-
申请号： US13181290申请日： 2011-07-12
-
公开(公告)号： US08501618B2公开(公告)日： 2013-08-06
- 发明人: Yaojian Lin , Xia Feng , Jianmin Fang , Kang Chen
- 申请人： Yaojian Lin , Xia Feng , Jianmin Fang , Kang Chen
- 申请人地址： SG Singapore
- 专利权人： STATS ChipPAC, Ltd.
- 当前专利权人： STATS ChipPAC, Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Patent Law Group: Atkins & Associates, P.C.
- 代理商 Robert D. Atkins
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A semiconductor device has a semiconductor die and first conductive layer formed over a surface of the semiconductor die. A first insulating layer is formed over the surface of the semiconductor die. A second insulating layer is formed over the first insulating layer and first conductive layer. An opening is formed in the second insulating layer over the first conductive layer. A second conductive layer is formed in the opening over the first conductive layer and second insulating layer. The second conductive layer has a width that is less than a width of the first conductive layer along a first axis. The second conductive layer has a width that is greater than a width of the first conductive layer along a second axis perpendicular to the first axis. A third insulating layer is formed over the second conductive layer and first insulating layer.
公开/授权文献
信息查询
IPC分类:
