Invention Grant
- Patent Title: Power light emitting diode and method with current density operation
- Patent Title (中): 电力发光二极管和电流密度运算方法
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Application No.: US12936238Application Date: 2010-09-20
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Publication No.: US08502465B2Publication Date: 2013-08-06
- Inventor: Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames
- Applicant: Thomas M. Katona , James W. Raring , Mark P. D'Evelyn , Michael R. Krames
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend & Stockton LLP
- International Application: PCT/US2010/049531 WO 20100920
- International Announcement: WO2011/035265 WO 20110324
- Main IPC: H05B37/02
- IPC: H05B37/02 ; H01L29/22
Abstract:
A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm2 and an external quantum efficiency with a roll off of less than about 5% absolute efficiency.
Public/Granted literature
- US20110279054A1 Power Light Emitting Diode and Method with Current Density Operation Public/Granted day:2011-11-17
Information query
