发明授权
US08514621B2 Flash memory device and system with program sequencer, and programming method
有权
闪存设备和带程序定序器的系统，以及编程方法
- 专利标题： Flash memory device and system with program sequencer, and programming method
- 专利标题（中）： 闪存设备和带程序定序器的系统，以及编程方法
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申请号： US13089639申请日： 2011-04-19
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公开(公告)号： US08514621B2公开(公告)日： 2013-08-20
- 发明人: Ki Hwan Choi , Sung Soo Lee , Jae-Woo Park , Sang-Hyun Joo
- 申请人： Ki Hwan Choi , Sung Soo Lee , Jae-Woo Park , Sang-Hyun Joo
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2010-0051748 20100601
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C16/04
摘要：
A programming method for a nonvolatile memory device includes performing a LSB programming operation programming all LSB logical pages, and thereafter performing a MSB programming operation programming all MSB logical pages, wherein during the LSB programming operation a selected MLC is programmed to a negative intermediate program state. A program sequence for the LSB and MSB programming operations may be sequential or non-sequential in relation to an order arranged of word lines.
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