公开(公告)号：US08514621B2

公开(公告)日：2013-08-20

申请号：US13089639

申请日：2011-04-19

申请人： Ki Hwan Choi ,  Sung Soo Lee ,  Jae-Woo Park ,  Sang-Hyun Joo

发明人： Ki Hwan Choi ,  Sung Soo Lee ,  Jae-Woo Park ,  Sang-Hyun Joo

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/3436

摘要： A programming method for a nonvolatile memory device includes performing a LSB programming operation programming all LSB logical pages, and thereafter performing a MSB programming operation programming all MSB logical pages, wherein during the LSB programming operation a selected MLC is programmed to a negative intermediate program state. A program sequence for the LSB and MSB programming operations may be sequential or non-sequential in relation to an order arranged of word lines.

摘要翻译： 用于非易失性存储器件的编程方法包括执行编程所有LSB逻辑页的LSB编程操作，并且此后执行MSB编程操作编程所有MSB逻辑页，其中在LSB编程操作期间，所选择的MLC被编程为负的中间程序状态 。 用于LSB和MSB编程操作的程序序列可以是与字线布置的顺序相关或非顺序的。

公开(公告)号：US20120307561A1

公开(公告)日：2012-12-06

申请号：US13327415

申请日：2011-12-15

申请人： Sang-Hyun Joo ,  Ki Hwan Choi ,  Moo Sung Kim

发明人： Sang-Hyun Joo ,  Ki Hwan Choi ,  Moo Sung Kim

IPC分类号： G11C16/10 ,  G06F12/16 ,  G11C16/04

CPC分类号： G11C16/0483 ,  G11C16/10 ,  G11C16/3445 ,  G11C16/3459

摘要： A non-volatile memory device includes access circuitry that selects a word line during an operation, applies a selected word line voltage to the selected word line, applies a non-selected word line voltage to non-selected word lines among the word lines, and applies a dummy word line voltage to the dummy word line. The dummy word line voltage is a first dummy word line voltage when the selected word line is not adjacent to the dummy word line and a second dummy word line voltage different from the first dummy word line voltage when the selected word line is adjacent to the dummy word line.

摘要翻译： 非易失性存储器件包括在操作期间选择字线的存取电路，将所选择的字线电压施加到所选择的字线，将未被选择的字线电压施加到字线中的未被选择的字线;以及 对虚拟字线应用虚拟字线电压。 当所选字线与虚拟字线不相邻时，虚拟字线电压是第一虚拟字线电压，当所选字线与虚拟字线相邻时，虚拟字线电压与第一虚拟字线电压不同的第二虚拟字线电压 字线。

公开(公告)号：US09905298B2

公开(公告)日：2018-02-27

申请号：US15260495

申请日：2016-09-09

申请人： Sang-Hyun Joo

发明人： Sang-Hyun Joo

IPC分类号： G11C16/04 ,  G11C16/10 ,  G11C16/08 ,  G11C16/30 ,  G11C16/32

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/30 ,  G11C16/32

摘要： A nonvolatile memory device includes a common source line connected to a plurality of cell strings. The cell strings each include a first selection transistor coupled to a string selection line, a second selection transistor coupled to a ground selection line, and a plurality of memory cells coupled to a plurality word-lines. The second selection transistors are commonly coupled to the common source line. A method of operating the nonvolatile memory device includes receiving a program command and an access address, and performing a program operation on a selected page according to the access address while floating the common source line. The common source line is floated based on at least one of the program command and the access address.

公开(公告)号：US09852796B2

公开(公告)日：2017-12-26

申请号：US15263773

申请日：2016-09-13

申请人： Kee-Ho Jung ,  Sang-Hyun Joo

发明人： Kee-Ho Jung ,  Sang-Hyun Joo

IPC分类号： G11C16/04 ,  G11C16/16 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26 ,  G11C16/34 ,  G11C29/50 ,  G11C29/02 ,  G11C29/04

CPC分类号： G11C16/16 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3445 ,  G11C29/025 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50004 ,  G11C2029/0409 ,  G11C2029/5004

摘要： A nonvolatile memory device includes memory blocks that each include cell strings formed vertically on a substrate. The cell strings are coupled to a plurality of bit-lines. The cell strings each include memory cells connected to a string selection transistor. A method of operating the nonvolatile memory device includes performing an erase operation on a first memory block of the memory blocks in response to an erase command, performing an erase verification operation on the memory cells of the first memory block, performing a first sensing operation on the string selection transistors of each of the cell strings coupled to at least some bit-lines of the first memory block, and determining whether the first memory block is a fail block at least based on a result of the first sensing operation. The first sensing operation is based on a first sensing scheme selected among a plurality of sensing schemes.

公开(公告)号：US09837163B2

公开(公告)日：2017-12-05

申请号：US14491123

申请日：2014-09-19

申请人： Kyungryun Kim ,  Goeun Jung ,  Sang-Hyun Joo ,  Kyehyun Kyung

发明人： Kyungryun Kim ,  Goeun Jung ,  Sang-Hyun Joo ,  Kyehyun Kyung

IPC分类号： G06F12/00 ,  G06F13/00 ,  G11C16/34 ,  G11C16/04

CPC分类号： G11C16/3418 ,  G11C16/0466 ,  G11C16/0483

摘要： One embodiment includes obtaining programming order information for the memory area from a first table based on address information. The programming order information indicates an order in which the memory area was programmed. The embodiment further includes determining an estimated elapsed time by accessing a second table based on the obtained programming order information. The estimated elapsed time indicating time that has elapsed since the portion of the memory area was last programmed. The embodiment includes controlling the memory based on the estimated elapsed time.

公开(公告)号：US08812933B2

公开(公告)日：2014-08-19

申请号：US13449501

申请日：2012-04-18

申请人： Sang-Hyun Joo ,  Kitae Park ,  Sangyong Yoon ,  Jinman Han

发明人： Sang-Hyun Joo ,  Kitae Park ,  Sangyong Yoon ,  Jinman Han

IPC分类号： G06F11/00 ,  G11C29/00 ,  H03M13/00 ,  G11C11/34 ,  G11C8/00 ,  G06F11/10 ,  G06F11/08 ,  H03M13/15

CPC分类号： G06F11/1016 ,  G06F11/08 ,  G06F11/10 ,  G06F11/1008 ,  G06F11/1048 ,  G06F11/1068 ,  G06F11/1076 ,  G06F11/108 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/3418 ,  H03M13/151 ,  H03M13/1525 ,  H03M13/1545

摘要： A memory system includes a nonvolatile memory device and a memory controller configured to control the nonvolatile memory device and configured to provide the nonvolatile memory device with error flag information including error location information of an error of data read from the nonvolatile memory device.

摘要翻译： 存储器系统包括非易失性存储器件和存储器控制器，其被配置为控制非易失性存储器件并且被配置为向非易失性存储器件提供包括从非易失性存储器件读取的数据的错误的错误位置信息的错误标志信息。

公开(公告)号：US20120089649A1

公开(公告)日：2012-04-12

申请号：US13269270

申请日：2011-10-07

申请人： Sang-Hyun Joo ,  Il-Kwon Jung ,  Byoung-Tae Choi

发明人： Sang-Hyun Joo ,  Il-Kwon Jung ,  Byoung-Tae Choi

IPC分类号： G06F17/30

CPC分类号： G06Q10/10

摘要： Disclosed is a method for managing a virtual world. The method for managing a virtual world includes: receiving virtual world management information including user information and communication information; and managing a virtual world, objects in the virtual world, and relationships between the objects using the virtual world management information.

摘要翻译： 公开了一种用于管理虚拟世界的方法。 用于管理虚拟世界的方法包括：接收虚拟世界管理信息，包括用户信息和通信信息; 并使用虚拟世界管理信息管理虚拟世界，虚拟世界中的对象以及对象之间的关系。

公开(公告)号：US10402247B2

公开(公告)日：2019-09-03

申请号：US15405339

申请日：2017-01-13

申请人： Bong-Soon Lim ,  Sang-Hyun Joo ,  Kee-Ho Jung

发明人： Bong-Soon Lim ,  Sang-Hyun Joo ,  Kee-Ho Jung

IPC分类号： G11C11/34 ,  G06F11/07 ,  G11C11/56 ,  G11C16/34

摘要： A non-volatile memory includes a page buffer array in which page buffers are arranged in a matrix form. A method of operating the non-volatile memory includes selecting columns from among multiple columns of the page buffer array, and counting fail bits stored in page buffers included in the selected columns.

公开(公告)号：US09189384B2

公开(公告)日：2015-11-17

申请号：US13553845

申请日：2012-07-20

申请人： Sang-Hyun Joo ,  Sangyong Yoon

发明人： Sang-Hyun Joo ,  Sangyong Yoon

IPC分类号： G06F12/02 ,  G11C11/56 ,  G11C13/00 ,  G11C16/34

CPC分类号： G06F12/0246 ,  G11C11/56 ,  G11C11/5607 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0035 ,  G11C13/0069 ,  G11C13/0097 ,  G11C16/349 ,  G11C2211/5641 ,  G11C2211/5644

摘要： A memory managing method is provided for a memory system, including a nonvolatile memory device and a memory controller controlling the nonvolatile memory device. The memory managing method includes determining whether a program-erase number of a memory block in the nonvolatile memory device reaches a first reference value; managing a life of the memory block according to a first memory managing method when the program-erase number of the memory block is determined to be less than the first reference value; and managing the life of the memory block according to a second memory managing method different from the first memory managing method when the program-erase number of the memory block is determined to be greater than the first reference value.

摘要翻译： 提供了一种用于存储器系统的存储器管理方法，包括非易失性存储器件和控制非易失性存储器件的存储器控​​制器。 存储器管理方法包括确定非易失性存储器件中的存储块的编程擦除次数是否达到第一参考值; 当存储块的编程擦除次数被确定为小于第一参考值时，根据第一存储器管理方法管理存储块的寿命; 以及当所述存储器块的所述编程擦除次数被确定为大于所述第一参考值时，根据与所述第一存储器管理方法不同的第二存储器管理方法来管理所述存储块的寿命。

公开(公告)号：US09021338B2

公开(公告)日：2015-04-28

申请号：US13604772

申请日：2012-09-06

申请人： Sang-Hyun Joo ,  Kitae Park ,  Sangyong Yoon ,  Jaeyong Jeong

发明人： Sang-Hyun Joo ,  Kitae Park ,  Sangyong Yoon ,  Jaeyong Jeong

IPC分类号： G06F11/10 ,  G11C29/42 ,  G06F3/06 ,  H03M13/05 ,  H03M13/37 ,  G06F12/02 ,  G06F11/14

CPC分类号： G06F11/1048 ,  G06F3/0649 ,  G06F11/1068 ,  G06F11/14 ,  G06F11/1402 ,  G06F12/0246 ,  G06F2212/72 ,  G06F2212/7205 ,  G11C29/42 ,  G11C2211/5641 ,  H03M13/05 ,  H03M13/3715

摘要： A memory system comprises a nonvolatile memory device comprising a memory cell array comprising first and second memory blocks, and a memory controller configured to control the nonvolatile memory device to read data from the first memory block, selectively determine an error correction operation to be performed on the data after it is read from the first memory block based on a state of at least one of the first and second memory blocks, and then store the data in the second memory block.

摘要翻译： 存储器系统包括非易失性存储器件，其包括包括第一和第二存储器块的存储器单元阵列，以及存储器控制器，其被配置为控制非易失性存储器件从第一存储器块读取数据，选择性地确定要执行的纠错操作 基于第一和第二存储器块中的至少一个的状态从第一存储器块读取之后的数据，然后将数据存储在第二存储器块中。