Invention Grant
- Patent Title: Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
- Patent Title (中): 使用中间导电结合层制造和转移微器件和微器件阵列的方法
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Application No.: US13436314Application Date: 2012-03-30
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Publication No.: US08518204B2Publication Date: 2013-08-27
- Inventor: Hsin-Hua Hu , Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law
- Applicant: Hsin-Hua Hu , Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law
- Applicant Address: US CA Santa Clara
- Assignee: LuxVue Technology Corporation
- Current Assignee: LuxVue Technology Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: B29C65/02
- IPC: B29C65/02 ; B29C65/48 ; B32B37/04 ; B32B39/00 ; B32B43/00
Abstract:
A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.
Public/Granted literature
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