发明授权
- 专利标题： Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
- 专利标题（中）： 使用中间导电结合层制造和转移微器件和微器件阵列的方法
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申请号： US13436314申请日： 2012-03-30
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公开(公告)号： US08518204B2公开(公告)日： 2013-08-27
- 发明人: Hsin-Hua Hu , Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law
- 申请人： Hsin-Hua Hu , Andreas Bibl , John A. Higginson , Hung-Fai Stephen Law
- 申请人地址： US CA Santa Clara
- 专利权人： LuxVue Technology Corporation
- 当前专利权人： LuxVue Technology Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely Sokoloff Taylor & Zafman LLP
- 主分类号： B29C65/02
- IPC分类号： B29C65/02 ; B29C65/48 ; B32B37/04 ; B32B39/00 ; B32B43/00
摘要：
A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.
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