发明授权
- 专利标题： Magnetic spin shift register memory
- 专利标题（中）： 磁自旋移位寄存器
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申请号： US13613313申请日： 2012-09-13
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公开(公告)号： US08518718B2公开(公告)日： 2013-08-27
- 发明人: Eric A. Joseph , Stuart S. P. Parkin , Mary B. Rothwell
- 申请人： Eric A. Joseph , Stuart S. P. Parkin , Mary B. Rothwell
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Louis Percello
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for forming a memory device includes forming a cavity having an inner surface with an undulating profile in a substrate, depositing a ferromagnetic material in the cavity, forming a reading element on the substrate proximate to a portion of the ferromagnetic material, and forming a writing element on the substrate proximate to a second portion of the ferromagnetic material.
公开/授权文献
- US20130005053A1 Magnetic Spin Shift Register Memory 公开/授权日：2013-01-03
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